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Electrocaloric effect and energy-storage performance in grain-size-engineered PBLZT antiferroelectric thick films

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Abstract

The effects of grain size on dielectric properties, energy-storage performance and electrocaloric effect (ECE) of Pb0.85Ba0.05La0.10(Zr0.90Ti0.10)O3 (PBLZT) antiferroelectric thick films were systematically studied. As the grain size was increased, dielectric constant of the thick films was increased, while their critical breakdown field was decreased. A giant reversible adiabatic temperature change of ∆T = 19.9 °C at room temperature was achieved in the PBLZT AFE thick film with a grain size of 0.59 µm. However, a huge recoverable energy-storage density of 33.6 J/cm3 and a high efficiency of 73 % were observed in the film with the smallest grain size of 0.19 µm at its breakdown field, because of its excellent electric field endurance. In addition, all the samples had a low leakage current density of below 10−6 A/cm2 at room temperature. These results indicated that our PBLZT AFE thick films could be a promising candidate for applications in high energy-storage density capacitors and solid-cooling devices by properly controlling their grain size.

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Acknowledgments

The authors would like to acknowledge the financial support by the Ministry of Sciences and Technology of China through 973-Project (2014CB660811), the National Natural Science Foundation of China (51462027), the Program for Innovative Research Team in Universities of Inner Mongolia Autonomous Region (NMGIRT-A1605), the Innovation Guide Fund of Baotou (CX2015-8) and the Innovation Program of Inner Monglia University of Science and Technology (2014QNGG01).

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  1. School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou, 014010, China

    Hongcheng Gao, Xihong Hao, Qiwei Zhang & Shengli An

  2. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore

    Ling Bing Kong

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Gao, H., Hao, X., Zhang, Q. et al. Electrocaloric effect and energy-storage performance in grain-size-engineered PBLZT antiferroelectric thick films. J Mater Sci: Mater Electron 27, 10309–10319 (2016). https://doi.org/10.1007/s10854-016-5114-0

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