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Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

  • Application of Atomic Layer Deposition for Functional Nanomaterials
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Abstract

Ferroelectricity in HfO2-based materials, especially Hf0.5Zr0.5O2 (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric random-access memory, ferroelectric field-effect transistors, ferroelectric tunneling junctions, steep-slope devices, and synaptic devices. The main reason for this increasing interest is that, when compared with conventional ferroelectric materials, HZO is compatible with complementary metal–oxide–semiconductor flow [even back-end of the line thermal budget] and can exhibit robust ferroelectricity even at extremely thin (< 10 nm) thicknesses. In this report, recent advances in the ferroelectric properties of HZO thin films since the first report in 2011, including doping effects, mechanical stress effects, interface effects, and ferroelectric film thickness effects, are comprehensively reviewed.

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Acknowledgements

This work was financially supported by Texas Instruments. We acknowledge Drs. L. Colombo and T. San for valuable discussion and comments, and thank Toshiba-Mitsubishi-Electric Industrial Systems Corporation (TMEIC) for providing ozone generator.

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  1. Department of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon, Gangwon-do, 24341, Republic of Korea

    Si Joon Kim

  2. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080, USA

    Jaidah Mohan & Jiyoung Kim

  3. Texas Instruments, 13121 TI Blvd, Dallas, TX, 75243, USA

    Scott R. Summerfelt

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Kim, S.J., Mohan, J., Summerfelt, S.R. et al. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances. JOM 71, 246–255 (2019). https://doi.org/10.1007/s11837-018-3140-5

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