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SiO2-Based Conductive-Bridging Random Access Memory

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Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

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Abstract

We present a review on the subject of conductive-bridging random access memory (CBRAM) based on copper- or silver-doped silicon dioxide. CBRAM is a promising type of resistive nonvolatile memory which relies on metal ion transport and redox reactions to form a persistent conducting filament in a high-resistance film. This effect may be reversed to return the device to a high-resistance state. Such control over resistance can be used to represent digital information (e.g., high = 0, low = 1) or produce multiple discrete or even continuous analog values as required by advanced storage and computing concepts. Many materials have been used in CBRAM devices, but we concentrate in this chapter on silicon dioxide as the ion-conducting layer. The primary benefits of this approach lie with the complementary metal–oxide–semiconductor process compatibility and the ubiquity of this material in integrated circuits, which greatly lower the barrier for widespread usage and permit integration of memory with silicon-based devices. Our discussion covers materials and electrochemical theory, including the role of counter charge in these devices, as well as the current understanding of the nature of the filament growth. Theory of operation is supported by descriptions of physical and electrical analyses of devices, including in situ microscopy and impedance spectroscopy. We also provide insight into memory arrays and other advanced applications, particularly in neuromorphic computing. The radiation tolerance of these devices is also described.

This chapter was originally published as a paper in the Journal of Electroceramics: Wenhao Chen, Stefan Tappertzhofen, Hugh J. Barnaby, “SiO2 based conductive bridging random access memory,” J Electroceramics, Vol. 39, nos 1–4 (2017), Pages 109–131. DOI: http://dx.doi.org/10.1007/s10832-017-0070-5.

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Acknowledgments

This work was funded, in part, by the Air Force Research Laboratory under grant no. FA9453-13-1-0288 (H.J.B.) and by the Defense Threat Reduction Agency under grant no. HDTRA1-11-1-005 (H.J.B. and M.N.K.). S.T. acknowledges funding by a DFG research fellowship under grant TA 1122/1-1. M.N.K. also acknowledges the support of Axon Technologies Corp.

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  1. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USA

    Wenhao Chen, Hugh J. Barnaby & Michael N. Kozicki

  2. Department of Engineering, University of Cambridge, Cambridge, UK

    Stefan Tappertzhofen

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  1. Massachusetts Institute of Technology, Cambridge, MA, USA

    Jennifer Rupp

  2. Elettronica, Informazione Bioingegneria, Politecnico di Milano, Dipto di, MILANO, Milano, Italy

    Daniele Ielmini

  3. Research Centre Juelich, Jülich, Germany

    Ilia Valov

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Chen, W., Tappertzhofen, S., Barnaby, H.J., Kozicki, M.N. (2022). SiO2-Based Conductive-Bridging Random Access Memory. In: Rupp, J., Ielmini, D., Valov, I. (eds) Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations. Electronic Materials: Science & Technology. Springer, Cham. https://doi.org/10.1007/978-3-030-42424-4_7

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