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Exponential ionic drift: fast switching and low volatility of thin-film memristors

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Abstract

We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulation results explain the very large ratios for the state lifetime to switching speed experimentally observed in devices for which resistance switching is due to ion migration. Given the activation barriers of the drifting species, it is possible to predict the volatility and switching time for various material systems.

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Authors and Affiliations

  1. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA, 94304, USA

    Dmitri B. Strukov & R. Stanley Williams

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  1. Dmitri B. Strukov
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  2. R. Stanley Williams
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Correspondence to Dmitri B. Strukov.

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Strukov, D.B., Williams, R.S. Exponential ionic drift: fast switching and low volatility of thin-film memristors. Appl. Phys. A 94, 515–519 (2009). https://doi.org/10.1007/s00339-008-4975-3

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