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Resistive Random Access Memory Device Physics and Array Architectures

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Emerging Non-volatile Memory Technologies

Abstract

Resistive random-access memories (RRAM) has garnered much interest in recent decades as a strong candidate to replace conventional memories like NAND flash, SRAM and DRAM. In contrast to the electrical charge changes in flash memories to define memory states, RRAM devices rely on non-volatile, reversible resistance changes within the device, hence its name. Apart from its superior performance: low power, high speed, high endurance, its simple two-terminal metal-insulator-metal (MIM) structure allows for a more scalable design and simpler fabrication processes. However, the RRAM is not without its problems and challenges. The resistive switching property of RRAM is inherently stochastic, resulting in variations between memory states, which could result in bit errors if unaccounted for. Also, the two-terminal RRAM requires a select device to prevent wrong selection of devices in an array. This chapter focuses on the redox-RRAM, where resistance changes take place through redox reactions within the insulator layer of the MIM, and will describe the basic operating principles of RRAM as well as various RRAM architectures.

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Acknowledgements

The authors would like to acknowledge the Programmatic grant no. A1687b0033 from the Singapore government’s Research, Innovation and Enterprise 2020 plan (Advanced Manufacturing and Engineering domain).

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    Victor Yiqian Zhuo, Zhixian Chen & King Jien Chui

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Zhuo, V.Y., Chen, Z., Chui, K.J. (2021). Resistive Random Access Memory Device Physics and Array Architectures. In: Lew, W.S., Lim, G.J., Dananjaya, P.A. (eds) Emerging Non-volatile Memory Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-15-6912-8_10

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