Abstract
A novel approach of chemical mechanical polishing (CMP) is developed for cadmium zinc telluride (CdZnTe or CZT) wafers. The approach uses environment-friendly slurry that consists of mainly silica, hydrogen peroxide, and citric acid. This is different from the previously reported slurries that are usually composed of strong acid, alkali, and bromine methanol and are detrimental to the environment and operators. Surface roughness 0.5 and 4.7 nm are achieved for Ra and peak-to-valley (PV) values, respectively, in a measurement area of 70 × 50 μm2, using the developed novel approach.
A novel approach of CMP is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra and peak-to-valley (PV) values of 0.45 and 4.74 nm are achieved, respectively, on MCT wafers after CMP. The first and second passivation processes are observed in electrochemical measurements on MCT wafers. Fundamental polishing mechanisms are also investigated in terms of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements.
References
Ahmad I, Islam M, Abdo HS, Subhani T, Khalil KA, Almajid AA, Yazdani B, Zhu YQ (2015) Toughening mechanisms and mechanical properties of graphene nanosheet-reinforced alumina. Mater Des 88:1234–1243. https://doi.org/10.1016/j.matdes.2015.09.125
Androulakis J, Peter SC, Li H, Malliakas CD, Peters JA, Liu ZF, Wessels BW, Song JH, Jin H, Freeman AJ, Kanatzidis MG (2011) Dimensional reduction: a design tool for new radiation detection materials. Adv Mater 23:4163–4167. https://doi.org/10.1002/adma.201102450
Aqariden F, Tari S, Nissanka K, Li J, Kioussis N, Pimpinella RE, Dobrowolska M (2012) Influence of surface polishing on the structural and electronic properties of CdZnTe surfaces. J Electron Mater 41:2893–2898. https://doi.org/10.1007/s11664-012-2126-2
Chandra A, Anderson G, Melkote S, Gao W, Haitjema H, Wegener K (2014) Role of surfaces and interfaces in solar cell manufacturing. CIRP Ann Manuf Technol 63:797–819. https://doi.org/10.1016/j.cirp.2014.05.008
Chaure NB, Chaure S, Pandey RK (2008) Cd1-xZnxTe thin films formed by non-aqueous electrochemical route. Electrochim Acta 54:296–304. https://doi.org/10.1016/j.electacta.2008.07.081
Chen SC (1994) Important inorganic chemical reactions, 3rd edn. Shanghai Press of Science and Technology, Shanghai, p 947
Cheng X, Zhu SF, Zhao BJ, He ZY, Gao DY, Fang J (2007) Effect of surface preparation on the properties of Au/p-Cd1-xZnxTe. Appl Surf Sci 253:8404–8407. https://doi.org/10.1016/j.apsusc.2007.04.008
Cohen TG, Sinkevich O, Levinshtein M, Ruzin A, Goldfarb I (2010) Atomic structure and electrical properties of In(Te) nanocontacts on CdZnTe(110) by scanning probe microscopy. Adv Funct Mater 20:215–223. https://doi.org/10.1002/adfm.200900812
Dean JA (1999) Lange’s handbook of chemistry, 15th edn. McGraw-Hill Company, New York, pp 8124–8139
Duff MC, Hunter DB, Burger A, Groza M, Buliga V, Black DR (2008) Effect of surface preparation technique on the radiation detector performance of CdZnTe. Appl Surf Sci 254:2889–2892. https://doi.org/10.1016/j.apsusc.2007.10.064
Feng YY, Gu M (2013) The electrochemical behavior of tellurium on GCE in sol and solutions. Electrochim Acta 90:416–420. https://doi.org/10.1016/j.electacta.2012.12.067
Garg A, Kapoor A, Tripathi KN, Bansal SK (2007) Laser induced damage studies in mercury cadmium telluride. Opt Laser Technol 39:1319–1327. https://doi.org/10.1016/j.optlastec.2006.12.002
Hossain A, Bolotnikov AE, Camarda GS, Cui Y, Jones D, Hall J, Kim KH, Mwathi J, Tong X, Yang G, James RB (2014) Novel approach to surface processing for improving the efficiency of CdZnTe detectors. J Electron Mater 43:2771–2777. https://doi.org/10.1007/s11664-013-2698-5
Ivanits’ka VG, Moravec P, Franc J, Tomashik VM, Tomashik ZF, Masek K, Chukhnenko PS, Hoschl P, Ulrych J (2011) Chemical polishing of CdTe and CdZnTe in iodine-methanol etching solutions. J Electron Mater 40:1802–1808. https://doi.org/10.1007/s11664-011-1649-2
Lei W, Antoszewski J, Faraone L (2015) Progress, challenges, and opportunities for HgCdTe infrared materials and detectors. Appl Phys Rev 2:041303. https://doi.org/10.1063/1.4936577
Li Q, Jie WQ (2006) Surface passivation and electrical properties of p-CdZnTe crystal. Semicond Sci Technol 21:72–75. https://doi.org/10.1088/0268-1242/21/1/013
Li YD, Ding Y, Liao HW, Qian YT (1999) Room-temperature conversion route to nanocrystalline mercury chalcogenides HgE (E = S, Se, Te). J Phys Chem Solids 60:965–968. https://doi.org/10.1016/S0022-3697(98)00349-7
Lin ZC, Wang RY, Ma SH (2018) Theoretical model and experimental analysis of chemical mechanical polishing with the effect of slurry for abrasive removal depth and surface morphology of silicon wafer. Tribol Int 117:119–130. https://doi.org/10.1016/j.triboint.2017.08.021
Martyniuk M, Sewell RH, Musca CA, Dell JM, Faraone L (2005) Nanoindentation of HgCdTe prepared by molecular beam epitaxy. Appl Phys Lett 87:251905. https://doi.org/10.1063/1.2143411
Okwechime IO, Egarievwe SU, Hossain A, Hales ZM, Egarievwe AA, James RB (2014) Chemical treatment of CdZnTe radiation detectors using hydrogen bromide and ammonium-based solutions. Proc SPIE Int Soc Opt Eng 9213:92130Y. https://doi.org/10.1117/12.2063067
Pelenc D, Merlin J, Etcheberry A, Ballet P, Baudry X, Brellier D, Destefanis V, Ferron A, Fougeres P, Giotta D, Grangier C, Mollard L, Perez A, Rochette F, Rubaldo L, Vaux C, Vigneron J, Zanatta JP (2014) Development of a method for chemical-mechanical preparation of the surface of CdZnTe substrates for HgCdTe-based infrared focal-plane arrays. J Electron Mater 43:3004–3011. https://doi.org/10.1007/s11664-014-3175-5
Qiao Y, Chen J (2008) Resistance of through-thickness grain boundaries to cleavage cracking in silicon thin films. Scr Mater 59:251–254. https://doi.org/10.1016/j.scriptamat.2008.03.022
Ramiro J, Galan L, Camarero EG, Montero I, Laaziz Y (2001) X-ray photoelectron spectroscopy of electrodeposited cadmium mercury telluride thin films and their native surface oxides. J Mater Res 16:1942–1952. https://doi.org/10.1557/JMR.2001.0266
Rogalski A (2005) HgCdTe infrared detector material: history, status and outlook. Rep Prog Phys 68:2267–2336. https://doi.org/10.1088/0034-4885/68/10/R01
Ruzin A, Sinkevich O, Cohen TG, Goldfarb I (2012) Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride. Appl Phys Lett 101:132108. https://doi.org/10.1063/1.4754706
Sang WB, Ju JH, Shi WM, Qian YB, Wang LJ, Xia YB, Wu WH, Fang JX, Li YJ, Zhao J, Gong HM (2000) Comparison of physical passivation of Hg1-xCdxTe. J Cryst Growth 214:265–268. https://doi.org/10.1016/S0022-0248(00)00085-3
Singh RR, Kaushik D, Gupta D, Sharma RK, Pandey RK (2006) Investigation of passivation processes for HgCdTe/CdS structure for infrared application. Thin Solid Films 510:235–240. https://doi.org/10.1016/j.tsf.2005.12.201
Singh RR, Kaushik D, Sharma M, Gupta DK, Pandey RK (2008) Studies on surface processing and passivation of p-Hg1-xCdxTe. Semicond Sci Technol 23:015016. https://doi.org/10.1088/0268-1242/23/1/015016
Tari S, Aqariden F, Chang Y, Ciani A, Grein C, Li J, Kioussis N (2014) Structural and electronic properties of gold contacts on CdZnTe with different surface finishes for radiation detector applications. J Electron Mater 43:2978–2983. https://doi.org/10.1007/s11664-014-3167-5
Teague LC, Duff MC, Cadieux JR, Soundararajan R, Shick CR, Lynn KG (2011) Characterization of etch pit formation via the Everson-etching method on CdZnTe crystal surfaces from the bulk to the nanoscale. Nucl Instrum Methods Phys Res Sect A 652:178–182. https://doi.org/10.1016/j.nima.2010.09.061
Venkatasamy V, Jayaraju N, Cox SM, Thambidurai C, Stickney JL (2007) Studies of Hg1-xCdxTe formation by electrochemical atomic layer deposition and investigations into bandgap engineering. J Electrochem Soc 154:H720–H725. https://doi.org/10.1149/1.2745677
Wang XQ, Jie WQ, Li Q, Gu Z (2005) Surface passivation of CdZnTe wafers. Mater Sci Semicond Process 8:615–621. https://doi.org/10.1016/j.mssp.2005.11.001
Wang L, Zhou P, Yan Y, Zhang B, Kang RK, Guo DM (2017) Chemical-mechanical wear of monocrystalline silicon by a single pad asperity. Int J Mach Tools Manuf 120:61–71. https://doi.org/10.1016/j.ijmachtools.2017.05.001
Yang G, Bolotnikov AE, Cui Y, Camarda GS, Hossain A, Kim KH, Gul R, James RB (2011) Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals. Appl Phys Lett 98:261901. https://doi.org/10.1063/1.3603930
Yang J, Hu YP, Tan JW, Jia L, Zhua YH, Yu JS (2015) Ultra-bright near-infrared-emitting HgS/ZnS core/shell nanocrystals for in vitro and in vivo imaging. J Mater Chem B 3:6928–6938. https://doi.org/10.1039/c5tb01034a
Zazvorka J, Franc J, Moravec P, Jesenska E, Sedivy L, Ulrych J, Masek K (2014) Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe. Appl Surf Sci 315:144–148. https://doi.org/10.1016/j.apsusc.2014.07.104
Zha FX, Zhou SM, Ma HL, Yin F, Zhang B, Li TX, Shao J, Shen XC (2008) Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe. Appl Phys Lett 93:151113. https://doi.org/10.1063/1.3001930
Zhang ZY, Gao H, Jie WQ, Guo DM, Kang RK, Li Y (2008) Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals. Semicond Sci Technol 23:105023. https://doi.org/10.1088/0268-1242/23/10/105023
Zhang ZF, Liu WL, Song ZT (2010) Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry. Appl Opt 49:5480–5485. https://doi.org/10.1364/AO.49.005480
Zhang ZY, Huo FW, Wu YQ, Huang H (2011) Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material. Int J Mach Tools Manuf 51:18–24. https://doi.org/10.1016/j.ijmachtools.2010.10.006
Zhang ZY, Song YX, Huo FW, Guo DM (2012a) Nanoscale material removal mechanism of soft-brittle HgCdTe single crystals under nanogrinding by ultrafine diamond grits. Tribol Lett 46:95–100. https://doi.org/10.1007/s11249-012-9924-9
Zhang ZY, Xu CG, Zhang XZ, Guo DM (2012b) Mechanical characteristics of nanocrystalline layers containing nanotwins induced by nanogrinding of soft-brittle CdZnTe single crystals. Scr Mater 67:392–395. https://doi.org/10.1016/j.scriptamat.2012.05.033
Zhang ZY, Li FY, Ma GJ, Kang RK, Guo XG (2013a) Ultrahigh hardness and improved ductility for nanotwinned mercury cadmium telluride. Scr Mater 69:231–234. https://doi.org/10.1016/j.scriptamat.2013.04.007
Zhang ZY, Zhang XZ, Xu CG Guo DM (2013b) Characterization of nanoscale chips and a novel model for face nanogrinding on soft-brittle HgCdTe films. Tribol Lett 49:203–215. https://doi.org/10.1007/s11249-012-0058-x
Zhang ZY, Wang B, Kang RK, Zhang B, Guo DM (2015a) Changes in surface layer of silicon wafers from diamond scratching. CIRP Ann Manuf Technol 64:349–352. https://doi.org/10.1016/j.cirp.2015.04.005
Zhang ZY, Yang S, Guo DM, Yuan BY, Guo XG, Zhang B, Huo YX (2015b) Deformation twinning evolution from a single crystal in a face-centered-cubic ternary alloy. Sci Rep 5:11290. https://doi.org/10.1038/srep11290
Zhang ZY, Wang B, Zhou P, Guo DM, Kang RK, Zhang B (2016a) A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors. Sci Rep 6:22466. https://doi.org/10.1038/srep22466
Zhang ZY, Wang B, Zhou P, Kang RK, Zhang B, Guo DM (2016b) A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers. Sci Rep 6:26891. https://doi.org/10.1038/srep26891
Zhang ZY, Shi ZF, Du YF, Yu ZJ, Guo LC, Guo DM (2018) A novel approach of chemical mechanical polishing for a titanium alloy using an environment-friendly slurry. Appl Surf Sci 427:409–415. https://doi.org/10.1016/j.apsusc.2017.08.064
Zheng Q, Dierre F, Crocco J, Carcelen V, Bensalah H, Plaza JL, Dieguez E (2011) Influence of surface preparation on CdZnTe nuclear radiation detectors. Appl Surf Sci 257:8742–8746. https://doi.org/10.1016/j.apsusc.2011.05.098
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Zhang, Z., Wang, B., Guo, D. (2018). Soft-Brittle Semiconductors Polishing with Environment-Friendly Slurries. In: Yan, J. (eds) Micro and Nano Fabrication Technology. Micro/Nano Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-13-0098-1_12
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