Abstract
Iodine-containing polishing etchants were tested on CdTe and Cd1−x Zn x Te surfaces with different orientations. The nature of the chemical dissolution of CdTe with (111)A, (111)B, (110), and (100) orientations in the I2–methanol solution was studied. It was established that this dissolution is diffusion controlled. Study of the chemical composition and structure of the (211)B Cd1−x Zn x Te surfaces etched under different conditions was carried out. X-ray photoelectron spectroscopy (XPS) measurements showed that a stoichiometric surface was achieved after short heating of the etched surface in vacuum. Reflection high-energy electron diffraction (RHEED) measurements reveal a high-quality single-crystalline surface layer in samples etched with iodine–methanol solutions as compared with bromine–methanol treatment.
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References
H.S. White, A.J. Ricco, and M.S. Wringhton, J. Phys. Chem. 87, 5140 (1983).
R.H. Williams and M.H. Patterson, Appl. Phys. Lett. 40, 484 (1982).
Z. Sobiesierski, I.M. Dharmadasa, and R.H. Williams, Appl. Phys. Lett. 53, 2623 (1988).
A. Ebina, K. Asano, and T. Takahashi, Phys. Rev. B 22, 1980 (1980).
A.J. Ricco, H.S. White, and M.S. Wringhton, J. Vac. Sci. Technol. A 2, 910 (1984).
D.N. Bose, S. Basu, and K.C. Mandal, Thin Solid Films 164, 13 (1988).
S. Tanaka, J.A. Bruce, and M.S. Wrighton, J. Phys. Chem. 85, 3778 (1981).
M.H. Patterson and R.H. Williams, J. Phys. D 11, L83 (1978).
J.P. Ponpon, Appl. Phys. A 27, 11 (1982).
P. Gaugash and A.G. Milnes, J. Electrochem. Soc. 128, 924 (1981).
R.D. Feldman, R.L. Opila, and P.M. Bridenbaugh, J. Vac. Sci. Technol. A 3, 1988 (1985).
Y.-C. Lu, C.M. Stahle, J. Morimoto, R.H. Bube, and R.S. Feigelson, J. Appl. Phys. 61, 924 (1987).
J. García-García, J. González-Hernández, and J.G. Mendoza-Alvarez, J. Appl. Phys. 67, 3810 (1990).
A. Waag, Y.S. Wu, R.N. Bicknell-Tassius, and G. Landwehr, Appl. Phys. Lett. 54, 2662 (1989).
J.L. Shaw, L.J. Brillson, S. Sivananthan, and J.P. Faurie, Appl. Phys. Lett. 56, 1266 (1990).
Y.S. Wu, C.R. Becker, A. Waag, R. Schmiedl, S. Einfeldt, and G. Landwehr, J. Appl. Phys. 73, 7385 (1993).
J.N. Johnson, L.A. Almeida, M. Martinka, J.D. Benson, and J.H. Dinan, J. Electron. Mater. 28, 817 (1999).
V.G. Ivanits’ka, P. Moravec, J. Franc, Z.F. Tomashik, P.I. Feychuk, V.M. Tomashik, L.P. Shcherbak, K. Mašek, and P. Höschl, J. Electron. Mater. 36, 1021 (2007).
P. Moravec, V.G. Ivanits’ka, J. Franc, Z.F. Tomashik, V.M. Tomashik, K. Mašek, P.I. Feychuk, L.P. Shcherbak, P. Höschl, R. Grill, and J. Walter, J. Electron. Mater. 38, 1645 (2009).
M. Mohai, Surf. Interface Anal. 36, 828 (2004).
B.D. Luft, V.A. Perevoshchikov, L.N. Vozmilova, I.A. Sverdlin, and K.G. Marin, Fiziko-khimicheskie metody obrabotki poverkhnosti poluprovodnikov (Physicochemical Processing of Semiconductor Surfaces) (Moscow: Radio i Svyaz, 1982), in Russian.
K. Sangwal, Etching of Crystals. Theory, Experiment, and Application (Amsterdam: North-Holland, 1987).
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Ivanits’ka, V.G., Moravec, P., Franc, J. et al. Chemical Polishing of CdTe and CdZnTe in Iodine–Methanol Etching Solutions. J. Electron. Mater. 40, 1802–1808 (2011). https://doi.org/10.1007/s11664-011-1649-2
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DOI: https://doi.org/10.1007/s11664-011-1649-2