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Nanoscale Material Removal Mechanism of Soft-Brittle HgCdTe Single Crystals Under Nanogrinding by Ultrafine Diamond Grits

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Abstract

Damage-free subsurfaces of soft-brittle HgCdTe (MCT) single crystals were directly achieved after nanogrinding by a developed ultrafine diamond wheel. This is different from those of hard-brittle semiconductors, where there is usually a damaged layer found after mechanical machining. Two chips induced by nanogrinding with thicknesses varying from 23 to 27.1 nm attached on the ground MCT surface were observed, which is consistent well with a proposed model of chip thickness. Nanoscale material removal mechanism was investigated using high resolution transmission electron microscopy. Twins and nanocrystals were observed within the chips found.

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Acknowledgments

The authors are grateful for the financial supports from the National Natural Science Foundation of China (91123013), and the Science and Technology Project of Dalian City of China (2009A18GX014).

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Authors and Affiliations

  1. Key Laboratory for Precision and Non-Traditional Machining Technology, Ministry of Education, Dalian University of Technology, Dalian, 116024, People’s Republic of China

    Zhenyu Zhang, Yaxing Song, Fengwei Huo & Dongming Guo

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  1. Zhenyu Zhang
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  2. Yaxing Song
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Correspondence to Zhenyu Zhang.

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Zhang, Z., Song, Y., Huo, F. et al. Nanoscale Material Removal Mechanism of Soft-Brittle HgCdTe Single Crystals Under Nanogrinding by Ultrafine Diamond Grits. Tribol Lett 46, 95–100 (2012). https://doi.org/10.1007/s11249-012-9924-9

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