Properties of reactively sputtered Mo1−x O x films F. C. T. SoE. KolawaM. -A. Nicolet Laser-Induced Chemical Processing of Materials Pages: 265 - 270
Effects of particle packing on the sintered microstructure E. A. BarringerH. K. Bowen Laser-Induced Chemical Processing of Materials Pages: 271 - 275
Laser-photoetching characteristics of polymers with dopants T. J. ChuangH. HiraokaA. Mödl Laser-Induced Chemical Processing of Materials Pages: 277 - 288
Ultraviolet laser ablation and etching of polymethyl methacrylate sensitized with an organic dopant R. SrinivasanB. Braren Laser-Induced Chemical Processing of Materials Pages: 289 - 292
Laser-induced chemical etching of silicon in chlorine atmosphere P. MogyorósiK. PiglmayerD. Bäuerle Laser-Induced Chemical Processing of Materials Pages: 293 - 299
248 nm laser etching of GaAs in chlorine and ozone gas environments G. KorenJ. E. Hurst Jr. Laser-Induced Chemical Processing of Materials Pages: 301 - 304
Laser-induced thermochemical maskless-etching of III–V compound semiconductors in chloride gas atmosphere M. TakaiJ. TsuchimotoS. Namba Laser-Induced Chemical Processing of Materials Pages: 305 - 312
Laser-induced surface reduction of the high-T c superconductor YBa2Cu3O7−x G. LibertsM. EyettD. Bäuerle ]Laser-Induced Chemical Processing of Materials Pages: 313 - 316
Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphere G. G. BentiniM. BianconiC. Summonte Laser-Induced Chemical Processing of Materials Pages: 317 - 324
Laser synthesis of metal silicides E. D'AnnaG. LeggieriA. Luches Laser-Induced Chemical Processing of Materials Pages: 325 - 335
Gas phase versus surface contributions to photolytic laser chemical vapor deposition rates D. BraichotteH. van den Bergh Laser-Induced Chemical Processing of Materials Pages: 337 - 343
Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si : H from SiH4 D. MetzgerK. HeschP. Hess Laser-Induced Chemical Processing of Materials Pages: 345 - 353
Diamond-like carbon films prepared by pulsed-laser evaporation T. SatoS. FurunoM. Hanabusa OriginalPaper Pages: 355 - 360
Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser F. FoulonE. FogarassyP. Siffert OriginalPaper Pages: 361 - 364
Onset of superconductivity at 107K in YBa2Cu3O7 − δ at high pressure M. W. McElfreshM. B. MapleZ. Fisk Rapid Communication Pages: 365 - 368