Abstract
Intense pulsed-laser irradiation in a suitable chemical atmosphere can produce a significant incorporation of chemical species from the environment to the surface molten layer. This process has been used to produce p-n junctions in silicon and GaAs irradiated, respectively, in PCl3 and SiH4 atmospheres. A modelling of the incorporation process, taking into account the solid-liquid-solid transition of the surface layer, has been developed following both a numerical and a semi-analytical approach. The modelling of the doping process gives results in a reasonably good agreement with the experimental doping profiles, obtained by irradiating Si samples in PCl3 atmosphere.
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Bentini, G.G., Bianconi, M. & Summonte, C. Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphere. Appl. Phys. A 45, 317–324 (1988). https://doi.org/10.1007/BF00617938
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DOI: https://doi.org/10.1007/BF00617938