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Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

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Abstract

Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.

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Authors and Affiliations

  1. Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (UA du CNRS No 292), F-67037, Strasbourg Cedex, France

    F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. Unamuno & P. Siffert

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  1. F. Foulon
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  2. E. Fogarassy
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  3. A. Slaoui
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  4. C. Fuchs
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  5. S. Unamuno
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  6. P. Siffert
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Foulon, F., Fogarassy, E., Slaoui, A. et al. Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser. Appl. Phys. A 45, 361–364 (1988). https://doi.org/10.1007/BF00617943

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  • DOI: https://doi.org/10.1007/BF00617943

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