Positron lifetime and Doppler-broadening measurements in noble metals and their alloys W. Lühr-TanckH. BosseTh. Hehenkamp OriginalPaper Pages: 209 - 211
Damage created by high-current-density implants of phosphorus into 〈100〉 and 〈111〉 silicon wafers M. ServidoriS. CannavóE. Rimini OriginalPaper Pages: 213 - 218
Characterization of photovoltaic cells using the photothermal deflection spectroscopy H. L. RietteL. C. M. MirandaH. Vargas OriginalPaper Pages: 219 - 222
Dependence of the longitudinal magnetoresistance of iron whiskers on the measuring current R. BertheU. HartmannH. H. Mende OriginalPaper Pages: 223 - 225
Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si J. P. PonponA. SaulnierR. Stuck OriginalPaper Pages: 227 - 232
Ion-energy distributions in liquid-metal-ion sources T. IshitaniY. KawanamiK. Umemura OriginalPaper Pages: 233 - 238
Surface polarization effect on positron backdiffusion from dielectrics A. DupasquierL. Quartapelle OriginalPaper Pages: 239 - 244
Determination of the photoionization threshold of the deep donor in Al0.33Ga0.67As:Si J. C. M. HenningJ. P. M. Ansems OriginalPaper Pages: 245 - 247
Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence A. SeguraM. C. Martínez-TomásA. Chevy OriginalPaper Pages: 249 - 260
Thickness dependence of temperature coefficient of resistance of MnBi films M. A. AngadiV. Thanigaimani Surfaces, Interfaces, and Layer Structures Pages: 261 - 264
Enhanced electrical surface conductivity of LiNbO3 induced by argon-ion bombardment E. SchreckK. Dransfeld Surfaces, Interfaces, and Layer Structures Pages: 265 - 268
Amorphization in Fe-Cu system by tracing its microscopic features L. J. HuangB. X. LiuH. -D. Li Surfaces, Interfaces, and Layer Structures Pages: 269 - 272
Study of metal-semiconductor interface states using deep level transient spectroscopy H. ZhangY. AoyagiS. Namba Surfaces, Interfaces, and Layer Structures Pages: 273 - 277
Phase formation and redistribution of Xe implanted in the Ni-Si system after fast melting and solidification Gen Qing YangS. U. Campisano Surfaces, Interfaces, and Layer Structures Pages: 279 - 284