Applied Physics A

, Volume 44, Issue 3, pp 273–277 | Cite as

Study of metal-semiconductor interface states using deep level transient spectroscopy

  • H. Zhang
  • Y. Aoyagi
  • S. Iwai
  • S. Namba
Surfaces, Interfaces, and Layer Structures


This paper describes the principle of the determination of interface-state parameters by deep level transient spectroscopy (DLTS) and presents a new, simple and exact method to discriminate the DLTS signal due to the emission from interface states from that from bulk traps. The n-type Au-GaAs and Cr-GaAs interfaces have been investigated by the technique. The results obtained in the investigation have revealed the dependences of the energy position, density and capture cross section for the interface states on the metal deposited onto the semiconductor surface, which is consistent with the theoretical prediction by Yndurain and the experimental results obtained by other authors.


73.30.+y 73.40.Ns 73.20.−r 


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Copyright information

© Springer-Verlag 1987

Authors and Affiliations

  • H. Zhang
    • 1
    • 2
  • Y. Aoyagi
    • 1
  • S. Iwai
    • 1
  • S. Namba
    • 1
  1. 1.The Institute of Physical and Chemical ResearchSaitamaJapan
  2. 2.The Xinjiang Institute of PhysicsChinese Academy of SciencesXinjiangChina

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