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Applied Physics A

, Volume 44, Issue 3, pp 273–277 | Cite as

Study of metal-semiconductor interface states using deep level transient spectroscopy

  • H. Zhang
  • Y. Aoyagi
  • S. Iwai
  • S. Namba
Surfaces, Interfaces, and Layer Structures

Abstract

This paper describes the principle of the determination of interface-state parameters by deep level transient spectroscopy (DLTS) and presents a new, simple and exact method to discriminate the DLTS signal due to the emission from interface states from that from bulk traps. The n-type Au-GaAs and Cr-GaAs interfaces have been investigated by the technique. The results obtained in the investigation have revealed the dependences of the energy position, density and capture cross section for the interface states on the metal deposited onto the semiconductor surface, which is consistent with the theoretical prediction by Yndurain and the experimental results obtained by other authors.

PACS

73.30.+y 73.40.Ns 73.20.−r 

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References

  1. 1.
    D.E. Eastman, J.L. Freeouf: Phys. Rev. Lett.34, 1624 (1975)Google Scholar
  2. 2.
    J.E. Rowe, S.B. Chritman, G. Margaritondo: Phys. Rev. Lett.35, 1471 (1975)Google Scholar
  3. 3.
    Y.W. Chung, W. Siekhans, G. Somorjai: Phys. Rev. B15, 959 (1977)Google Scholar
  4. 4.
    P.E. Gregory, W.E. Spicer: Phys. Rev. B12, 2370 (1975)Google Scholar
  5. 5.
    C. Barret, A. Vapaille: Solid-State Electron.18, 25 (1975)Google Scholar
  6. 6.
    C. Barret, A. Vapaille: Solid-State Electron.19, 73 (1976)Google Scholar
  7. 7.
    H. Zhang, Y. Aoyagi, S. Iwai, S. Namba: Appl. Phys. Lett.50, 341 (1987)Google Scholar
  8. 8.
    C.R. Crowell, M. Beguwala: Solid-State Electron.14, 1149 (1971)Google Scholar
  9. 9.
    E.H. Rhoderick: J. Phys. D5, 1920 (1972)Google Scholar
  10. 10.
    K. Yamasaki, M. Yoshida, T. Sugano: Jpn. J. Appl. Phys.18, 113 (1979)Google Scholar
  11. 11.
    P.K. Bhattarcharya, J.W. Ku, S.J.T. Owen: Appl. Phys. Lett.36, 304 (1980)Google Scholar
  12. 12.
    E.E. Wagner, D.E. Mars, G. Hom, G.B. Stringfellow: J. Appl. Phys.51, 5434 (1980)Google Scholar
  13. 13.
    H.Z. Zhu, Y. Adachi, T. Ikoma: J. Cryst. Growth55, 154 (1981)Google Scholar
  14. 14.
    M.O. Watanabe, A. Tanaka, T. Udagawa, T. Nakanishi, Y. Zohta: Jpn. J. Appl. Phys.22, 923 (1983)Google Scholar
  15. 15.
    T. Hashizume, E. Ikeda, Y. Akatsu, H. Ohno, H. Hasegawa: Jpn. J. Appl. Phys.23, L 296 (1984)Google Scholar
  16. 16.
    F. Yndurain: J. Phys. C4, 2849 (1971)Google Scholar
  17. 17.
    W. Mönch: Phys. Stat. Solidi40, 257 (1970)Google Scholar

Copyright information

© Springer-Verlag 1987

Authors and Affiliations

  • H. Zhang
    • 1
    • 2
  • Y. Aoyagi
    • 1
  • S. Iwai
    • 1
  • S. Namba
    • 1
  1. 1.The Institute of Physical and Chemical ResearchSaitamaJapan
  2. 2.The Xinjiang Institute of PhysicsChinese Academy of SciencesXinjiangChina

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