1. Molecular — impurity absorption in KC1 for infrared laser windows

   • H. G. Lipson
   • J. J. Larkin
   • S. S. Mitra

   OriginalPaper Pages: 1 - 24

2. The structural and piezoelectric properties of epitaxial AℓN on Aℓ₂O₃

   • F. A. Pizzarello
   • J. E. Coker

   OriginalPaper Pages: 25 - 36

3. Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of In_xGa_1−xAs

   • M. Ettenberg
   • C. J. Nuese
   • R. E. Enstrom

   OriginalPaper Pages: 37 - 66

4. Tl₃VS₄ as an acousto-optic and surface wave material

   • T. J. Isaacs
   • M. Gottlieb
   • J. D. Feichtner

   OriginalPaper Pages: 67 - 75

5. The role of ionization coefficient in the operation of avalanche diodes above breakdown

   • P. Antognetti
   • W. G. Oldham

   OriginalPaper Pages: 77 - 90

6. Rare-earth-modified Sr_0.5Ba_0.5Nb₂O₆, ferroelectric crystals and their applications as infrared detectors

   • S. T. Liu
   • R. B. Maciolek

   OriginalPaper Pages: 91 - 100

7. Te and Ge — doping studies in Ga_1−xAl_xAs

   • A. J. SpringThorpe
   • F. D. King
   • A. Becke

   OriginalPaper Pages: 101 - 118

8. Multi-layer epitaxially grown silicon impatt diodes at millimeter-wave frequencies

   • C. P. Wen
   • Y. S. Chiang
   • E. J. Denlinger

   OriginalPaper Pages: 119 - 129

9. Characterization of GaAs substrates and epitaxial GaAs_1−xP_x layers by divergent x-ray beam diffraction

   • L. F. Donaghey
   • R. H. Bissinger

   OriginalPaper Pages: 131 - 158

10. Bonding and thermal stability of implanted hydrogen in silicon

    • H. J. Stein

    OriginalPaper Pages: 159 - 174

11. The influence of oxidation-sirtl etch condition on the stacking fault generation in (111) silicon wafers

    • Y. Sugita
    • T. Aoshima
    • A. Yoshinaka

    OriginalPaper Pages: 175 - 189

12. Preparation and properties of electronic materials

    Announcement Pages: 191 - 192

13. Electronic materials committe student awards for 1974

    Announcement Pages: 193 - 193