Abstract
The successive oxidation-Sirtl etch technique has been investigated to evaluate the perfection of silicon crystals by detecting extrinsic stacking faults produced during oxidation. Experiments were performed in (111) epitaxial wafers. Measured densities of stacking faults were found to epend on the conditions of thermal oxidation, and stacking fault densities were a maximum at an oxidation temperature of around 1100°C. The stacking fault densities were reduced appreciably when epitaxial wafers were chemically etched to remove several tens of microns prior to the test. The generation of stacking faults is thought to occur by heterogeneous nucleation due to a very small amount of unidentified impurity found in epitaxial crystals.
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Sugita, Y., Aoshima, T., Yoneda, K. et al. The influence of oxidation-sirtl etch condition on the stacking fault generation in (111) silicon wafers. J. Electron. Mater. 4, 175–189 (1975). https://doi.org/10.1007/BF02657843
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DOI: https://doi.org/10.1007/BF02657843