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Characterization of GaAs substrates and epitaxial GaAs1−xPx layers by divergent x-ray beam diffraction

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Abstract

The application of the divergent x-ray beam diffraction method was studied for characterizing lattice imperfections, lattice parameters and composition variations and lattice strain in GaAs substrates and in GaAs1−xPx epitaxial layers. Reflection conics from {117}, {026}, {155} and (004) planes predominate in pseudo-Kossel back reflection patterns obtained from samples with (001) orientations. The sensitivity of pseudo-Kossel line displacements is assessed for lattice parameter and anisotropic strain distortion measurements. The lattice parameter of GaAs was determined to be 5.6435 ∢. Moseic subgrain misorientations in GaAs1−xPx epitaxial layers were found to be relatively independent of graded layer composition gradients, whereas homogeneous stress distortion was more strongly dependent.

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Authors and Affiliations

  1. Inorganic Materials Research Division, Lawrence Berkeley Laboratory, University of California, 94720, Berkeley

    L. F. Donaghey

  2. Department of Chemical Engineering, University of California, 94720, Berkeley

    R. H. Bissinger

  3. Union Research Center, Brea, California

    R. H. Bissinger

Authors
  1. L. F. Donaghey
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  2. R. H. Bissinger
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Donaghey, L.F., Bissinger, R.H. Characterization of GaAs substrates and epitaxial GaAs1−xPx layers by divergent x-ray beam diffraction. J. Electron. Mater. 4, 131–158 (1975). https://doi.org/10.1007/BF02657841

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  • DOI: https://doi.org/10.1007/BF02657841

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