Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition Wei LiuSoo Jin ChuaJi Zhang Regular Issue Paper Pages: 841 - 845
Normal-incidence mid-infrared Ge quantum-dot photodetector Fei LiuSong TongKang L. Wang Regular Issue Paper Pages: 846 - 850
Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers Sridhar GovindarajuJason M. ReifsniderArchie L. Holmes Jr. Regular Issue Paper Pages: 851 - 860
Infrared transmission spectra of Cd1−xZnxTe (x = 0.04) crystals Li YujieGu ZhiJie Wangqi Regular Issue Paper Pages: 861 - 866
Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs K. D. MoiseevA. KrierY. P. Yakovlev Regular Issue Paper Pages: 867 - 872
Impurities in hydride gases part 2: Investigation of trace CO2 in the liquid and vapor phases of ultra-pure ammonia Hans H. FunkeJon WelchhansMark W. Raynor Regular Issue Paper Pages: 873 - 880
Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defects J. ZhaoY. ChangN. Dhar Regular Issue Paper Pages: 881 - 885
Germanium-on-insulator substrates by wafer bonding Clarence J. TracyPeter FejesPhilip Ong Regular Issue Paper Pages: 886 - 892
Simulation of the potting effect on the high-G MEMS accelerometer Yuqi JiangMaohua DuXinxin Li Regular Issue Paper Pages: 893 - 899
Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage W. -M. ChenP. MccloskeyS. C. O’Mathuna Regular Issue Paper Pages: 900 - 907
Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors Ho-Young ChaY. C. ChoiM. G. Spencer Regular Issue Paper Pages: 908 - 911
GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition P. D. YeG. D. WilkJ. Bude Regular Issue Paper Pages: 912 - 915
Formation of thermally stable Ni monosilicide using an inductively coupled plasma process Young-Woo OkChel-Jong ChoiTae-Yeon Seong Regular Issue Paper Pages: 916 - 922
Creep properties of Sn-8Mass%Zn-3Mass%Bi lead-free alloy Ikuo ShohjiColin GaggWilliam J. Plumbridge Regular Issue Paper Pages: 923 - 927