Abstract
Single-crystal Ge-on-insulator (GOI) substrates, made by bonding a hydrogen-implanted Ge substrate to a thermally oxidized, silicon handle wafer, are studied for properties relevant to device fabrication. The stages of the layer transfer process are examined through transmission electron microscopy (TEM) from the initial hydrogen implant through the final Ge film polish. The completed GOI substrate is characterized for film uniformity, surface quality, contamination, stress, defectivity, and thermal robustness using a variety of techniques and found to be acceptable for initial device processing.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Z. Cheng, G. Taraschi, M. Currie, C. Leitz, M. Lee, A. Pitera, T. Langdo, J. Hoyt, D. Antoniadis, and E. Fitzgerald, J. Electron. Mater. 30, L37 (2001).
J. Zahler, C.-G. Ahn, S. Zaghi, H. Atwater, C. Chu, and P. Iles, Thin Solid Films 403, 558 (2002).
C.H. Huang, M.Y. Yang, A. Chin, W.J. Chen, C.X. Zhu, B.J. Cho, M.-F. Li, and D.L. Kwong, 2003 Symp. VLSI Technology (Piscataway, NJ: IEEE, 2003), pp. 119–120.
M.I. Current, I.J. Malik, M. Fuerfanger, M. Korolik, S. Kang, H. Kirk, M. Fang, S.N. Farrens, and F.J. Henley, Silicon-on-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium (Electrochemical Society Proceedings vol. 2001–3), pp. 75–78.
I.J. Malik, S.W. Bedell, H. Kirk, M. Korolik, S. Kang, M.I. Current, and F.J. Henley, 2000 International Conference on Solid State Devices and Materials X (Tokyo: Business Center for Academic Societies Japan, 2000), pp. 490–491.
W.G. En, I.J. Malik, M.A. Bryan, S. Farrens, F.J. Henley, N.W. Cheung, and C. Chan, Int. IEEE SOI Conf. Proc. (Piscataway, NJ: IEEE, 1998), pp. 163–164.
S. Farrens, J.R. Dekker, J.K. Smith, and B.E. Roberds, J. Electrochem. Soc. 142, 3949 (1995).
I.J. Malik, S. Kang, J. Sullivan, M. Fuerfanger, P.J. Ong, and F.J. Henley, Spring 2003 ECS Meeting, Extended Abstract (Pennington, NJ: Electrochemical Society, 2003).
S. Gan, L. Li, and R.F. Hicks, J. Electrochem. Soc. 73, 1068 (1998).
J.M. Zahler, C.G. Ahn, S. Zaghi, H. Atwater, C. Chu, and P. Iles, Mater. Res. Soc. Symp. Proc. 681E, 14.5.1 (2001).
Umicore Electro-Optic Materials, Olen, Belgium.
Charles Evans & Associates, Sunnyvale, CA.
International Technology Roadmap for Semiconductors, 2003 edition, http://public.itrs.net
C. Jasper, L. Rubin, C. Lindfors, K.S. Jones, and J. Oh, 14th Int. Conf. on Ion Implantation Technology 2002 (Piscataway, NJ: IEEE, 2003), pp. 548–551.
S.M. Sze, Physics of Semiconductor Devices (New York: John Wiley & Sons, Inc., 1981), pp. 850–851.
S. Gan, L. Li, and R.F. Hicks, Appl. Phys. Lett. 73, 1068 (1998).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tracy, C.J., Fejes, P., Theodore, N.D. et al. Germanium-on-insulator substrates by wafer bonding. J. Electron. Mater. 33, 886–892 (2004). https://doi.org/10.1007/s11664-004-0216-5
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-004-0216-5