1. Foreword

   • Michael A. Capano
   • Suzanne Mohney

   Special Issue Paper Pages: 383 - 383

2. Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr

   • A. Y. Polyakov
   • N. B. Smirnov
   • R. G. Wilson

   Special Issue Paper Pages: 384 - 388

3. Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

   • T. Paskova
   • V. Darakchieva
   • D. Hommel

   Special Issue Paper Pages: 389 - 394

4. Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

   • V. Reddy
   • Sang-Ho Kim
   • Tae-Yeon Seong

   Special Issue Paper Pages: 395 - 399

5. Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si₃N₄ passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

   • W. S. Tan
   • P. A. Houston
   • P. J. Parbook

   Special Issue Paper Pages: 400 - 407

6. Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

   • D. W. Gotthold
   • S. P. Guo
   • B. Peres

   Special Issue Paper Pages: 408 - 411

7. Characterization of multiple carriers in GaN using variable magnetic-field hall measurements

   • C. H. Swartz
   • R. P. Tompkins
   • J. R. Sizelove

   Special Issue Paper Pages: 412 - 417

8. Vanadium-based ohmic contacts to n-type Al_0.6Ga_0.4N

   • J. H. Wang
   • S. E. Mohney
   • R. D. Dupuis

   Special Issue Paper Pages: 418 - 421

9. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

   • L. Shen
   • R. Coffie
   • U. K. Mishra

   Special Issue Paper Pages: 422 - 425

10. Lateral schottky GaN rectifiers formed by Si⁺ ion implantation

    • Y. Irokawa
    • Jihyun Kim
    • J. -I. Chyi

    Special Issue Paper Pages: 426 - 430

11. Phonon-assisted deep level luminescence in heavily Mg-doped InGaN

    • B. Han
    • M. P. Ulmer
    • B. W. Wessels

    Special Issue Paper Pages: 431 - 435

12. Influence of layer structure on performance of AlGaN/GaN high electron mobility transistors before and after passivation

    • J. Bernát
    • P. Javorka
    • P. Kordoš

    Special Issue Paper Pages: 436 - 439

13. The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructures

    • S. K. Davidsson
    • M. Gurusinghe
    • H. Zirath

    Special Issue Paper Pages: 440 - 444

14. Mg fluctuation in p-GaN layers and its effects on InGaN/GaN blue light-emitting diodes dependent on p-GaN growth temperature

    • C. S. Kim
    • H. K. Cho
    • H. K. Cho

    Special Issue Paper Pages: 445 - 449

15. Nondestructive defect characterization of SiC substrates and epilayers

    • Xianyun Ma
    • Tangali Sudarshan

    Special Issue Paper Pages: 450 - 455

16. Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

    • Z. -Q. Fang
    • D. C. Look
    • S. E. Saddow

    Special Issue Paper Pages: 456 - 459

17. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

    • S. Tsukimoto
    • K. Nitta
    • Masanori Murakami

    Special Issue Paper Pages: 460 - 466

18. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

    • I. A. Buyanova
    • M. Izadifard
    • J. M. Zavada

    Special Issue Paper Pages: 467 - 471

19. Partial dislocations and stacking faults in 4H-SiC PiN diodes

    • M. E. Twigg
    • R. E. Stahlbush
    • S. Wang

    Special Issue Paper Pages: 472 - 476

20. SiC via holes by laser drilling

    • S. Kim
    • B. S. Bang
    • S. J. Pearton

    Special Issue Paper Pages: 477 - 480

21. Electro-chemical mechanical polishing of silicon carbide

    • Canhua Li
    • Ishwara B. Bhat
    • Joseph Seiler

    Special Issue Paper Pages: 481 - 486

22. Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths

    • S. -Y. Hwang
    • J. -H. Park
    • B. -T. Lee

    Letter Pages: L11 - L14