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Characterization of multiple carriers in GaN using variable magnetic-field hall measurements

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Abstract

Variable magnetic-field Hall-effect measurements were performed on two thick GaN samples grown by hydride vapor-phase epitaxy (HVPE), one freestanding and one attached to the sapphire substrate. Results are compared to those obtained using the more standard, single magnetic-field Hall measurements. In both samples, a second low-mobility electron was indicated that significantly influenced interpretation of single-field Hall measurements, particularly at low temperatures. Extraction of the bulk carrier using fits to the variable-field Hall data allowed a more accurate determination of the temperature dependence of the bulk electrical properties and, hence, basic physical parameters. In addition, the quantitative mobility-spectrum analysis (QMSA) technique, reported here for the first time on GaN, indicated a continuous and significant spread in mobility for the bulk electron, likely with sample thickness. Thus, even the “improved” results, based on modeling the multiple-carrier fitting (MCF) analysis, obtained in this study should be viewed with some suspicion, as they clearly represent an average over an electrically inhomogeneous sample.

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Authors and Affiliations

  1. Department of Physics, West Virginia University, 26506, Morgantown, WV

    C. H. Swartz, R. P. Tompkins & T. H. Myers

  2. Semiconductor Research Center, Wright State University, 45435, Dayton, OH

    D. C. Look

  3. Air Force Research Laboratory, Materials and Manufacturing Directorate, 45433, Wright-Patterson Air Force Base, OH

    D. C. Look & J. R. Sizelove

Authors
  1. C. H. Swartz
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  2. R. P. Tompkins
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  3. T. H. Myers
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  4. D. C. Look
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  5. J. R. Sizelove
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Swartz, C.H., Tompkins, R.P., Myers, T.H. et al. Characterization of multiple carriers in GaN using variable magnetic-field hall measurements. J. Electron. Mater. 33, 412–417 (2004). https://doi.org/10.1007/s11664-004-0193-8

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  • DOI: https://doi.org/10.1007/s11664-004-0193-8

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