Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr A. Y. PolyakovN. B. SmirnovR. G. Wilson Special Issue Paper Pages: 384 - 388
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending T. PaskovaV. DarakchievaD. Hommel Special Issue Paper Pages: 389 - 394
Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN V. ReddySang-Ho KimTae-Yeon Seong Special Issue Paper Pages: 395 - 399
Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors W. S. TanP. A. HoustonP. J. Parbook Special Issue Paper Pages: 400 - 407
Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide D. W. GottholdS. P. GuoB. Peres Special Issue Paper Pages: 408 - 411
Characterization of multiple carriers in GaN using variable magnetic-field hall measurements C. H. SwartzR. P. TompkinsJ. R. Sizelove Special Issue Paper Pages: 412 - 417
Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N J. H. WangS. E. MohneyR. D. Dupuis Special Issue Paper Pages: 418 - 421
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design L. ShenR. CoffieU. K. Mishra Special Issue Paper Pages: 422 - 425
Lateral schottky GaN rectifiers formed by Si+ ion implantation Y. IrokawaJihyun KimJ. -I. Chyi Special Issue Paper Pages: 426 - 430
Phonon-assisted deep level luminescence in heavily Mg-doped InGaN B. HanM. P. UlmerB. W. Wessels Special Issue Paper Pages: 431 - 435
Influence of layer structure on performance of AlGaN/GaN high electron mobility transistors before and after passivation J. BernátP. JavorkaP. Kordoš Special Issue Paper Pages: 436 - 439
The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructures S. K. DavidssonM. GurusingheH. Zirath Special Issue Paper Pages: 440 - 444
Mg fluctuation in p-GaN layers and its effects on InGaN/GaN blue light-emitting diodes dependent on p-GaN growth temperature C. S. KimH. K. ChoH. K. Cho Special Issue Paper Pages: 445 - 449
Nondestructive defect characterization of SiC substrates and epilayers Xianyun MaTangali Sudarshan Special Issue Paper Pages: 450 - 455
Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate Z. -Q. FangD. C. LookS. E. Saddow Special Issue Paper Pages: 456 - 459
Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC S. TsukimotoK. NittaMasanori Murakami Special Issue Paper Pages: 460 - 466
Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes I. A. BuyanovaM. IzadifardJ. M. Zavada Special Issue Paper Pages: 467 - 471
Partial dislocations and stacking faults in 4H-SiC PiN diodes M. E. TwiggR. E. StahlbushS. Wang Special Issue Paper Pages: 472 - 476
Electro-chemical mechanical polishing of silicon carbide Canhua LiIshwara B. BhatJoseph Seiler Special Issue Paper Pages: 481 - 486
Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths S. -Y. HwangJ. -H. ParkB. -T. Lee Letter Pages: L11 - L14