Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays Hojin RyuJinmo KangMyoung-Su Yang Regular Issue Paper Pages: 919 - 924
Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers Jay J. SenkevichB. WangM. T. Weise Regular Issue Paper Pages: 925 - 931
Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion Shiwei FengJun HuChuni Ghosh Regular Issue Paper Pages: 932 - 934
Ta/Au ohmic contacts to n-type ZnO H. ShengN. W. EmanetogluY. Lu Regular Issue Paper Pages: 935 - 938
Effects of solid-state annealing on the interfacial intermetallics between tin-lead solders and copper Kithva H. PrakashThirumany Sritharan Regular Issue Paper Pages: 939 - 947
Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors Y. M. HsinH. T. HsuN. Y. Li Regular Issue Paper Pages: 948 - 951
Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers M. W. LiangT. E. HsiehT. H. Chuang Regular Issue Paper Pages: 952 - 956
Effects of vacuum annealing on electrical properties of GaN contacts Ippei FujimotoHirokuni AsamizuMasanori Murakami Regular Issue Paper Pages: 957 - 963
The electrical characteristics of 4H-SiC schottky diodes after inductively coupled plasma etching N. O. V. PlankLiudi JiangR. Cheung Regular Issue Paper Pages: 964 - 971
Fabrication of ultra-thin strained silicon on insulator T. S. DrakeC. Ní ChléirighJ. L. Hoyt Regular Issue Paper Pages: 972 - 975
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition Shawn G. ThomasSushil BharatanHans Von Känel Regular Issue Paper Pages: 976 - 980
Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films Hiroshi OkadaNaoki FujitaHisayoshi Itoh Letter Pages: L5 - L8