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Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion

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Abstract

The Zn3As2 and Zn3P2 were used as Zn-diffusion sources to form a p-region in undoped-InP wafers. The p-type InP formed by Zn diffusion from a Zn3P2 source has higher transmittance over the testing-spectrum range 1,000–1,700 nm versus Zn diffusion from a Zn3As2 source. In the case of a p-type region formed from a Zn3As2 source, x-ray photoelectron spectroscopy (XPS) showed As atoms were reduced from the oxide state and formed an InAs composition, which introduces more absorption loss.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Rutgers University, 08854, Piscataway, NJ

    Shiwei Feng, Jun Hu & Yicheng Lu

  2. Department of Physics, Rutgers University, 08854, Piscataway, NJ

    Boris V. Yakshinskiy

  3. Princeton Optronics Inc., 08543, Princeton, NJ

    James D. Wynn & Chuni Ghosh

Authors
  1. Shiwei Feng
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  2. Jun Hu
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  3. Yicheng Lu
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  4. Boris V. Yakshinskiy
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  5. James D. Wynn
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  6. Chuni Ghosh
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Feng, S., Hu, J., Lu, Y. et al. Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion. J. Electron. Mater. 32, 932–934 (2003). https://doi.org/10.1007/s11664-003-0225-9

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  • DOI: https://doi.org/10.1007/s11664-003-0225-9

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