Abstract
Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1×1017 cm−2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
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Okada, H., Fujita, N., Lee, HS. et al. Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films. J. Electron. Mater. 32, L5–L8 (2003). https://doi.org/10.1007/s11664-003-0234-8
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DOI: https://doi.org/10.1007/s11664-003-0234-8