GaN and other materials for semiconductor spintronics S. J. PeartonY. D. ParkF. Ren Special Issue Paper Pages: 288 - 297
Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy M. E. OverbergG. T. ThalerA. F. Hebard Special Issue Paper Pages: 298 - 306
p-GaN-i-GaN/AlGaN multiple-quantum well n-AlGaN back-illuminated ultraviolet detectors A. TekeS. DoganR. R. Alfano Special Issue Paper Pages: 307 - 311
Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry Yi-Sheng TingChii-Chang ChenJung-Tsung Hsu Special Issue Paper Pages: 312 - 315
Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes X. A. CaoS. F. LeboeufH. Liu Special Issue Paper Pages: 316 - 321
Impurity effects on photoluminescence in lateral epitaxially overgrown GaN J. W. P. HsuF. F. SchreyT. F. Kuech Special Issue Paper Pages: 322 - 326
Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis Stephen K. O’LearyBrian E. FoutzLester F. Eastman Special Issue Paper Pages: 327 - 334
Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaN D. SelvanathanL. ZhouN. Finnegan Special Issue Paper Pages: 335 - 340
Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air Ching-Ting LeeYow-Jon LinTsung-Hsin Lee Special Issue Paper Pages: 341 - 345
Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy M. Zafar IqbalM. A. ReshchikovH. Morkoç Special Issue Paper Pages: 346 - 349
Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates W. S. TanP. A. HoustonP. J. Parbook Special Issue Paper Pages: 350 - 354
Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors D. MisteleT. RotterJ. Salzman Special Issue Paper Pages: 355 - 363
High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes J. P. ZhangH. M. WangM. Asif Khan Special Issue Paper Pages: 364 - 370
Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition R. VenugopalJ. WanA. Ramdas Special Issue Paper Pages: 371 - 374
Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures Yung-Chen ChengCheng-Hua TsengJen-Inn Chyi Special Issue Paper Pages: 375 - 381
Compositional changes in erbium-implanted GaN films due to annealing J. M. ZavadaR. G. WilsonH. X. Jiang Special Issue Paper Pages: 382 - 387
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors A. P. ZhangL. B. RowlandL. F. Eastman Special Issue Paper Pages: 388 - 394
The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors Yu-Zung ChiouYan-Kuin SuSen-Hai Liu Special Issue Paper Pages: 395 - 399
Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer J. K. SheuC. J. KaoJ. M. Tsai Special Issue Paper Pages: 400 - 402
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates Y. P. HsuS. J. ChangS. C. Chen Special Issue Paper Pages: 403 - 406
AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide C. K. WangY. Z. ChiouS. C. Chen Special Issue Paper Pages: 407 - 410
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer L. W. WuS. J. ChangB. R. Huang Special Issue Paper Pages: 411 - 414
Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers C. H. KuoS. J. ChangS. C. Chen Special Issue Paper Pages: 415 - 418
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping T. C. WenS. J. ChangT. Y. Tsai Special Issue Paper Pages: 419 - 422
Hydrogen interaction with defects and impurities in 6H-SiC Yaroslav KoshkaJanna B. DufreneJeffrey B. Casady Special Issue Paper Pages: 423 - 425
Carbon structural transitions and ohmic contacts on 4H-SiC Weijie LuWilliam C. MitchelW. Eugene Collins Special Issue Paper Pages: 426 - 431
High-purity semi-insulating 4H-SiC for microwave device applications J. R. JennyD. P. MaltaC. H. Carter Jr. Special Issue Paper Pages: 432 - 436
Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance A. P. ZhangL. B. RowlandB. J. Edward Special Issue Paper Pages: 437 - 443
Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC D. AlvarezV. V. KonovalovM. E. Zvanut Special Issue Paper Pages: 444 - 447
Two- and three-dimensional simulation of chemical vapor deposition SiC epitaxial growth processes Y. KoshkaG. MelnychukM. S. Mazzola Special Issue Paper Pages: 448 - 451
Effect of boron on the resistivity of compensated 4H-SiC R. R. CiechonskiM. SyväjärviR. Yakimova Special Issue Paper Pages: 452 - 457
Time-dependent characteristics of titanium-silicide contacts to 6H-silicon carbide M. A. CapanoJ. K. PattersonJ. S. Solomon Special Issue Paper Pages: 458 - 463
Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy K. -C. ChangJ. BentleyL. M. Porter Special Issue Paper Pages: 464 - 469
