1. InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

   • Markus Forsberg
   • Donato Pasquariello
   • David Bergman

   Regular Issue Paper Pages: 111 - 116

2. Reactive wetting between molten Sn-Bi and Ni substrate

   • Jou-I Lee
   • Sinn-Wen Chen
   • Chih-Ming Chen

   Regular Issue Paper Pages: 117 - 122

3. Effects of substrate metallization of solder/under-bump metallization interfacial reactions in flip-chip packages during multiple reflow cycles

   • F. Zhang
   • M. Li
   • Z. C. Shao

   Regular Issue Paper Pages: 123 - 130

4. Curing kinetics of anisotropic conductive adhesive film

   • Y. C. Chan
   • M. A. Uddin
   • H. P. Chan

   Regular Issue Paper Pages: 131 - 136

5. Effect of temperature cycling on angular alignment in add/drop filter-module packaging

   • C. S. Hsieh
   • J. M. Chen
   • W. H. Cheng

   Regular Issue Paper Pages: 137 - 141

6. Time-independent mechanical and physical properties of the ternary 95.5Sn-3.9Ag-0.6Cu solder

   • Paul T. Vianco
   • Jerome A. Rejent
   • Alice C. Kilgo

   Regular Issue Paper Pages: 142 - 151

7. Microstructures in solder joints between Sn95.5Ag4Cu0.5 solder and Ag/Pd thick film

   • Dewei Tian
   • Terho Kutilainen

   Regular Issue Paper Pages: 152 - 158

8. Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire

   • D. S. Liu
   • Y. C. Chao

   Regular Issue Paper Pages: 159 - 165

9. Fracture toughness of Cu-Sn intermetallic thin films

   • B. Balakrisnan
   • C. C. Chum
   • T. Cahyadi

   Regular Issue Paper Pages: 166 - 171

10. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates

    • Takenori Tanno
    • Ken Suto
    • Jun-Ichi Nishizawa

    Regular Issue Paper Pages: 172 - 175

11. Comparisons using optoelectronic modulation spectroscopy of n-type GaAs epitaxial layers formed on buffer layers prepared at normal and low temperatures

    • Chi-Hsin Chiu
    • J. G. Swanson

    Regular Issue Paper Pages: 176 - 183

12. Nickel silicidation techniques for strained Si_1−xGe_x, Si_1−x−yGe_xC_y, and Si_1−yC_y alloys material-device applications

    • Zhongha Shi
    • David Onsongo
    • Sanjay K. Banerjee

    Regular Issue Paper Pages: 184 - 190

13. Composite substrate material for surface acoustic-wave oscillator

    • Sean Wu
    • Yeong-Chin Chen
    • Maw-Shung Lee

    Regular Issue Paper Pages: 191 - 194

14. Intermetallic compounds formed during the reflow of In-49Sn solder ball-grid array packages

    • T. H. Chuang
    • S. Y. Chang
    • H. M. Wu

    Regular Issue Paper Pages: 195 - 200