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Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates

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Abstract

The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at EC — 1.9–2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at EV + 0.85 eV and EV + 1.5 eV were an order of magnitude reduced and, in contrast, the level at EC − 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at EC − 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.

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Authors and Affiliations

  1. Department of Materials Sciences, Tohoku University, 980-8579, Sendai, Japan

    Takenori Tanno, Ken Suto & Yutaka Oyama

  2. Semiconductor Research Institute, 980-0862, Sendai, Japan

    Ken Suto, Yutaka Oyama & Jun-Ichi Nishizawa

Authors
  1. Takenori Tanno
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  2. Ken Suto
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  3. Yutaka Oyama
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  4. Jun-Ichi Nishizawa
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Tanno, T., Suto, K., Oyama, Y. et al. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates. J. Electron. Mater. 32, 172–175 (2003). https://doi.org/10.1007/s11664-003-0189-9

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  • DOI: https://doi.org/10.1007/s11664-003-0189-9

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