Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe T. NguyenJ. AntoszewskiL. Faraone Special Issue Paper Pages: 652 - 659
Doping of molecular beam epitaxy HgCdTe using an arsenic cracker source (As2) L. A. Almeida Special Issue Paper Pages: 660 - 663
Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength J. D. PhillipsD. D. EdwallD. L. Lee Special Issue Paper Pages: 664 - 668
Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays L. A. AlmeidaM. ThomasJ. H. Dinan Special Issue Paper Pages: 669 - 676
Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices K. JóźwikowskiA. RogalskiA. Jóźwikowska Special Issue Paper Pages: 677 - 682
Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere S. Y. AnJ. S. KimS. H. Suh Special Issue Paper Pages: 683 - 687
HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures T. J. De LyonG. L. OlsonS. L. Bailey Special Issue Paper Pages: 688 - 693
Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy P. BoieriuY. ChenV. Nathan Special Issue Paper Pages: 694 - 698
1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors A. I. D’SouzaM. G. StapelbroekG. M. Williams Special Issue Paper Pages: 699 - 704
A discussion on the utilization of elemental transmutation for efficient p-type doping in HgCdTe and HgCdTeSe: Approach and methodology T. D. GoldingC. L. LittlerJ. H. Dinan Special Issue Paper Pages: 705 - 709
Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe R. HaakenaasenH. SteenH. Syversen Special Issue Paper Pages: 710 - 714
Activation of arsenic as an acceptor in Hg1−xCdxTe under equilibrium conditions D. ChandraH. F. SchaakeH. D. Shih Special Issue Paper Pages: 715 - 719
A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays S. TerterianM. ChuC. C. Wang Special Issue Paper Pages: 720 - 725
Advances in large-area Hg1−xCdxTe photovoltaic detectors for remote-sensing applications P. S. WijewarnasuriyaM. ZandianF. Moore Special Issue Paper Pages: 726 - 731
Suppression of strain-induced cross-hatch on molecular beam epitaxy (211)B HgCdTe M. MartinkaL. A. AlmeidaJ. H. Dinan Special Issue Paper Pages: 732 - 737
Formation and propagation of p-n junction in p-(HgCd)Te caused by dry etching E. BelasR. GrillA. L. Toth Special Issue Paper Pages: 738 - 742
Passivation effects on reactive-ion-etch-formed n-on-p junctions in HgCdTe J. K. WhiteJ. AntoszewskiJ. Piotrowski Special Issue Paper Pages: 743 - 748
Development of a high-selectivity process for electron cyclotron resonance plasma etching of II-VI semiconductors A. J. StoltzJ. D. BensonJ. H. Dinan Special Issue Paper Pages: 749 - 753
Band anticrossing in highly mismatched group II-VI semiconductor alloys K. M. YuJ. WuA. Ramdas Special Issue Paper Pages: 754 - 758
Heavy Cr doping of ZnSe by molecular beam epitaxy B. L. VanmilA. J. PtakLarry Wang Special Issue Paper Pages: 770 - 775
Visible emission from ZnO doped with rare-earth ions W. M. JadwisienczakH. J. LozykowskiB. Patel Special Issue Paper Pages: 776 - 784
Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy K. YasudaY. TomitaY. Agata Special Issue Paper Pages: 785 - 790
Growth of undoped and chromium-doped CdSxSe1−x crystals by the physical vapor transport method U. N. RoyY. CuiJonathan T. Goldstein Special Issue Paper Pages: 791 - 794
Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions O. O. AdetunjiN. RoyA. Burger Special Issue Paper Pages: 795 - 798
Heavily p-type doped ZnSe using Te and N codoping Y. GuIgor L. KuskovskyM. C. Tamargo Special Issue Paper Pages: 799 - 801
Infrared spectroscopy of chromium-doped cadmium selenide J. -O. NdapC. I. RablauA. Burger Special Issue Paper Pages: 802 - 805
Observation of lasing from Cr2+:CdTe and compositional effects in Cr2+-doped II-VI semiconductors A. G. BluiettU. HömmerichC. C. Wang Special Issue Paper Pages: 806 - 810
Nonalloyed Al ohmic contacts to MgxZn1−xO H. ShengN. W. EmanetogluY. Lu Special Issue Paper Pages: 811 - 814
Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates J. B. VaresiA. A. BuellD. F. King Special Issue Paper Pages: 815 - 821
Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes J. D. BensonA. J. StoltzJ. H. Dinan Special Issue Paper Pages: 822 - 826
Stacking-fault formation and propagation in 4H-SiC PiN diodes R. E. StahlbushM. FatemiS. Wang Erratum Pages: 827 - 827
Creep behavior of eutectic Sn-Cu lead-free solder alloy C. M. L. WuM. L. Huang Erratum Pages: 828 - 828
