Abstract
We report the development and fabrication of two-color mid-wavelength infrared (MWIR) and short-wavelength infrared (SWIR) HgCdTe-based focalplane arrays (FPAs). The HgCdTe multilayers were deposited on bulk CdZnTe (ZnTe mole fraction ∼3%) using molecular beam epitaxy (MBE). Accurate control of layer composition and growth rate was achieved using in-situ spectroscopic ellipsometry (SE). Epilayers were evaluated using a variety of techniques to determine suitability for subsequent device processing. These techniques included Fourier transform infrared (FTIR) spectroscopy, Hall measurement, secondary ion mass spectroscopy (SIMS), defect-decoration etching, and Nomarski microscopy. The FTIR transmission measurements confirmed SE’s capability to provide excellent compositional control with run-to-run x-value variations of ∼0.002. Nomarski micrographs of the as-grown surfaces featured cross-hatch patterns resulting from the substrate/epilayer lattice mismatch as well as various surface defects (voids and “microvoids”), whose densities ranged from 800–8,000 cm−2. A major source of these surface defects was substrate particulate contamination. Epilayers grown following efforts to reduce these particulates exhibited significantly lower densities of surface defects from 800–1,700 cm−2. Dislocation densities, as revealed by a standard defect-decoration etch, were 2–20×105 cm−2, depending on substrate temperature during epitaxy. The FPAs (128×128) were fabricated from these epilayers. Preliminary performance results will be presented.
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Almeida, L.A., Thomas, M., Larsen, W. et al. Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays. J. Electron. Mater. 31, 669–676 (2002). https://doi.org/10.1007/s11664-002-0217-1
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DOI: https://doi.org/10.1007/s11664-002-0217-1