1. Foreword

   • Karl D. Hobart

   EditorialNotes Pages: 797 - 797

2. InAs/InGaSb photodetectors grown on GaAs bonded substrates

   • M. F. Vilela
   • K. A. Anselm
   • F. Szmulowicz

   Special Issue Paper Pages: 798 - 801

3. Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates

   • P. D. Moran
   • T. F. Kuech

   Special Issue Paper Pages: 802 - 806

4. Uniaxial, tensile-strained Si devices

   • Rona E. Belford

   Special Issue Paper Pages: 807 - 811

5. Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

   • D. Zubia
   • S. Zhang
   • S. D. Hersee

   Special Issue Paper Pages: 812 - 816

6. High mobility electron heterostructure wafer fused onto LiNbO₃

   • K. J. Friedland
   • A. Riedel
   • K. H. Ploog

   Special Issue Paper Pages: 817 - 820

7. A study of cracking in GaN grown on silicon by molecular beam epitaxy

   • R. Jothilingam
   • M. W. Koch
   • G. W. Wicks

   Special Issue Paper Pages: 821 - 824

8. High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

   • G. Kipshidze
   • S. Nikishin
   • M. Fatemi

   Special Issue Paper Pages: 825 - 828

9. Substrate smoothing using gas cluster ion beam processing

   • L. P. Allen
   • D. B. Fenner
   • J. Hautala

   Special Issue Paper Pages: 829 - 833

10. The generic nature of the Smart-Cut^® process for thin film transfer

    • B. Aspar
    • H. Moriceau
    • B. Ghyselen

    Special Issue Paper Pages: 834 - 840

11. Silicon layer transfer using wafer bonding and debonding

    • Cynthia Colinge
    • Brian Roberds
    • Brian Doyle

    Special Issue Paper Pages: 841 - 844

12. Hydrogen plasma passivation of bulk GaAs and Al_0.3Ga_0.7As/GaAs multiple-quantum-well structures on Si substrates

    • G. Wang
    • T. Ogawa
    • T. Egawa

    Regular Issue Paper Pages: 845 - 849

13. Defects in annealed 1.5 MeV boron implanted p-type silicon

    • J. Y. Dai
    • K. K. Ong
    • S. K. Lahiri

    Regular Issue Paper Pages: 850 - 854

14. Development of Al-free ohmic contact to n-GaN

    • Dae-Woo Kim
    • Jun Cheol Bae
    • Sung-Man Lee

    Regular Issue Paper Pages: 855 - 860

15. Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

    • Ching-Tingh Lee
    • Hsiao-Wei Kao
    • Fu-Tasi Hwang

    Regular Issue Paper Pages: 861 - 865

16. Spatial distribution of metal fillers in isotropically conductive adhesives

    • Y. Fu
    • M. Willander
    • J. Liu

    Regular Issue Paper Pages: 866 - 871

17. Low-noise solar-blind Al_xGa_1-xN-based metal-semiconductor-metal ultraviolet photodetectors

    • Ting Li
    • D. J. H. Lambert
    • J. C. Campbell

    Regular Issue Paper Pages: 872 - 877

18. Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing

    • Bi-Lian Young
    • Jenq-Gong Duh

    Regular Issue Paper Pages: 878 - 884

19. Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors

    • K. J. Choi
    • J. L. Lee

    Regular Issue Paper Pages: 885 - 890

20. N-type doping of 4H-SiC with phosphorus Co-implanted with C or Si

    • L. Zhu
    • Z. Li
    • T. P. Chow

    Regular Issue Paper Pages: 891 - 894

21. Strain induced lateral ordering in Ga_0.22In_0.78As/Ga_0.22In_0.78P short period superlattices on (001) InP

    • M. L. Dotor
    • C. Quintana
    • D. Golmayo

    Regular Issue Paper Pages: 895 - 899

22. Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

    • Young-Woo Ok
    • Chel-Jong Choi
    • I. Suemune

    Regular Issue Paper Pages: 900 - 906