Skip to main content
SpringerLink
Log in

Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates

  • Regular Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Hydrogen (H) plasma passivation effects on GaAs grown on Si substrates (GaAs on Si) are investigated in detail. H plasma exposure effectively passivates both the shallow and deep defects in GaAs on Si, which improves both the electrical and optical properties. It was found that the minority carrier lifetime is increased and the deep level concentration is decreased by the H plasma exposure. In addition, after H plasma exposure, room temperature photoluminescence (PL) for Al0.3Ga0.7As/GaAs multiple-quantum-well (MQW) on Si is enhanced with a decrease in the spectral width.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S.F. Fang, K. Adomi, S. Lyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, J. Appl. Phys. 68, R31 (1990).

    Article  CAS  Google Scholar 

  2. N. Wada, S. Sakai, S. Yoshimi, Y. Shintani, and M. Fukui, Jpn. J. Appl. Phys. 33, 1268 (1994).

    Article  CAS  Google Scholar 

  3. S. Sakai, T. Soga, M. Takeyasu, and M. Umeno, Appl. Phys. Lett. 48, 413 (1986).

    Article  CAS  Google Scholar 

  4. T. Egawa, H. Tada, Y. Kobayashi, T. Soga, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 57, 1179 (1990).

    Article  CAS  Google Scholar 

  5. N. Otsuka, C. Choi, Y. Nakamura, S. Nagakura, R. Foscher, C.K. Peng, and H. Morkoc, Appl. Phys. Lett. 49, 277 (1986).

    Article  CAS  Google Scholar 

  6. M. Tachikawa and H. Mori, Appl. Phys. Lett. 56, 2225 (1990).

    Article  CAS  Google Scholar 

  7. M. Akiyama, Y. Kawarada, and K. Kaminishi, J. Cryst. Growth 68, 21 (1984).

    Article  CAS  Google Scholar 

  8. M. Yamaguchi, A. Yamamoto, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

    Article  CAS  Google Scholar 

  9. R.M. Sieg, J.A. Carlin, J.J. Boeckl, S.A. Ringel, M.T. Currie, S.M. Ting, T.A. Langdo, G. Taraschi, E.A. Fitzgerald, and B.M. Keyes, Appl. Phys. Lett. 73, 3111 (1998).

    Article  CAS  Google Scholar 

  10. J.A. Carlin, S.A. Ringel, E.A. Fitzgerald, M. Bulsara, and B.M. Keyes, Appl. Phys. Lett. 76, 1884 (2000).

    Article  CAS  Google Scholar 

  11. S.J. Pearton, J.W. Corbett and M. Stavola, Hydrogen in Crystalline Semiconductors (Berlin: Springer, 1992).

    Google Scholar 

  12. S.J. Pearton, C.S. Wu, M. Stavola, F. Ren, J. Lopata, W.C. Dautremont-Smith, S.M. Vernon, and V.E. Haven, Appl. Phys. Lett. 51, 496 (1987).

    Article  CAS  Google Scholar 

  13. E.F. Schubert, Doping in III–V Semiconductors (Cambridge, U.K.: Cambridge University Press, 1993).

    Google Scholar 

  14. T. Soga, S. Sakai, M. Umeno, and S. Hattori, Jpn. J. Appl. Phys. 25, 1510 (1986).

    Article  CAS  Google Scholar 

  15. R.K. Ahrenkiel, M.M. Al-Jassim, B. Keyes, D. Dunlavy, K.M. Jones, S.M. Vernon, and T.M. Dixon. J. Electrochem. Soc. 137, 996 (1990).

    Article  CAS  Google Scholar 

  16. S.J. Pearton, W.C. Dautremont-Smith, J. Chevallier, C.W. Tu, and K.D. Cummings, J. Appl. Phys. 59, 2821 (1986).

    Article  CAS  Google Scholar 

  17. D. Bimberg, D. Mars, J.N. Miller, R. Bauer, and D. Oertel, J. Vac. Sci. Technol. B 4, 1014 (1986).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555, Nagoya, Japan

    G. Wang, T. Ogawa, F. Kunimasa & M. Umeno

  2. Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555, Nagoya, Japan

    T. Soga & T. Jimbo

  3. Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555, Nagoya, Japan

    T. Egawa

Authors
  1. G. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Ogawa
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. F. Kunimasa
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Umeno
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. T. Soga
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. T. Jimbo
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. T. Egawa
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wang, G., Ogawa, T., Kunimasa, F. et al. Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates. J. Electron. Mater. 30, 845–849 (2001). https://doi.org/10.1007/s11664-001-0069-0

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-001-0069-0

Key words

Search

Navigation