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Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

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Abstract

Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1−xNx layer (x 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), 506-712, Kwangju, Korea

    Young-Woo Ok, Chel-Jong Choi & Tae-Yeon Seong

  2. Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, 060-0812, Sapporo, Japan

    K. Uesugi & I. Suemune

Authors
  1. Young-Woo Ok
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  2. Chel-Jong Choi
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  3. Tae-Yeon Seong
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  4. K. Uesugi
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  5. I. Suemune
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Ok, YW., Choi, CJ., Seong, TY. et al. Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy. J. Electron. Mater. 30, 900–906 (2001). https://doi.org/10.1007/s11664-001-0079-y

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  • DOI: https://doi.org/10.1007/s11664-001-0079-y

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