InAs/InGaSb photodetectors grown on GaAs bonded substrates M. F. VilelaK. A. AnselmF. Szmulowicz Special Issue Paper Pages: 798 - 801
Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates P. D. MoranT. F. Kuech Special Issue Paper Pages: 802 - 806
Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE D. ZubiaS. ZhangS. D. Hersee Special Issue Paper Pages: 812 - 816
High mobility electron heterostructure wafer fused onto LiNbO3 K. J. FriedlandA. RiedelK. H. Ploog Special Issue Paper Pages: 817 - 820
A study of cracking in GaN grown on silicon by molecular beam epitaxy R. JothilingamM. W. KochG. W. Wicks Special Issue Paper Pages: 821 - 824
High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy G. KipshidzeS. NikishinM. Fatemi Special Issue Paper Pages: 825 - 828
Substrate smoothing using gas cluster ion beam processing L. P. AllenD. B. FennerJ. Hautala Special Issue Paper Pages: 829 - 833
The generic nature of the Smart-Cut® process for thin film transfer B. AsparH. MoriceauB. Ghyselen Special Issue Paper Pages: 834 - 840
Silicon layer transfer using wafer bonding and debonding Cynthia ColingeBrian RoberdsBrian Doyle Special Issue Paper Pages: 841 - 844
Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates G. WangT. OgawaT. Egawa Regular Issue Paper Pages: 845 - 849
Defects in annealed 1.5 MeV boron implanted p-type silicon J. Y. DaiK. K. OngS. K. Lahiri Regular Issue Paper Pages: 850 - 854
Development of Al-free ohmic contact to n-GaN Dae-Woo KimJun Cheol BaeSung-Man Lee Regular Issue Paper Pages: 855 - 860
Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers Ching-Tingh LeeHsiao-Wei KaoFu-Tasi Hwang Regular Issue Paper Pages: 861 - 865
Spatial distribution of metal fillers in isotropically conductive adhesives Y. FuM. WillanderJ. Liu Regular Issue Paper Pages: 866 - 871
Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Ting LiD. J. H. LambertJ. C. Campbell Regular Issue Paper Pages: 872 - 877
Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing Bi-Lian YoungJenq-Gong Duh Regular Issue Paper Pages: 878 - 884
Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors K. J. ChoiJ. L. Lee Regular Issue Paper Pages: 885 - 890
N-type doping of 4H-SiC with phosphorus Co-implanted with C or Si L. ZhuZ. LiT. P. Chow Regular Issue Paper Pages: 891 - 894
Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP M. L. DotorC. QuintanaD. Golmayo Regular Issue Paper Pages: 895 - 899
Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy Young-Woo OkChel-Jong ChoiI. Suemune Regular Issue Paper Pages: 900 - 906