Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures J. W. P. HsuM. J. ManfraR. J. Molnar Special Issue Paper Pages: 110 - 114
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy J. W. P. HsuD. V. LangR. J. Molnar Special Issue Paper Pages: 115 - 122
Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures S. T. BradleyA. P. YoungW. J. Schaff Special Issue Paper Pages: 123 - 128
Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN Jong Kyu KimKi-Jeong KimJong-Lam Lee Special Issue Paper Pages: 129 - 133
The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction H. M. NgR. HarelA. Y. Cho Special Issue Paper Pages: 134 - 137
The temperature dependence of the thermal conductivity of single crystal GaN films C. LuoD. R. ClarkeJ. R. Dryden Special Issue Paper Pages: 138 - 146
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures A. Y. PolyakovN. B. SmirnovC. -M. Lee Special Issue Paper Pages: 147 - 155
Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy Sangbeom KangW. Alan DoolittleApril S. Brown Special Issue Paper Pages: 156 - 161
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy C. D. LeeV. RamachandranR. P. Devaty Special Issue Paper Pages: 162 - 169
Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN Jong Kyu KimChong Cook KimJong-Lam Lee Special Issue Paper Pages: 170 - 174
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN K. O. SchweitzS. E. Mohney Special Issue Paper Pages: 175 - 182
The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment Dae-Woo KimJun Cheol BaeSung-Man Lee Special Issue Paper Pages: 183 - 187
Light emission from interface traps and bulk defects in SiC MOSFETs R. E. StahlbushP. J. Macfarlane Special Issue Paper Pages: 188 - 195
Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes Q. ZhangV. MadangarliT. S. Sudarshan Special Issue Paper Pages: 196 - 201
Comparison of F2 plasma chemistries for deep etching of SiC P. LeerungnawaratK. P. LeeS. N. G. Chu Special Issue Paper Pages: 202 - 206
Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD G. WagnerB. ThomasK. Irmscher Special Issue Paper Pages: 207 - 211
Etching of silicon carbide for device fabrication and through via-hole formation F. A. KhanB. RoofI. Adesida Special Issue Paper Pages: 212 - 219
Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation Y. KoshkaM. MazzolaC. U. Pittman Special Issue Paper Pages: 220 - 223
Boron diffusion into 6H-SiC through graphite mask S. SolovievY. GaoT. Sudarshan Special Issue Paper Pages: 224 - 227
Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers S. E. SaddowT. E. SchattnerW. C. Mitchel Special Issue Paper Pages: 228 - 234
Influence of carrier freeze-out on SiC Schottky junction admittance Andrei V. LosMichael S. Mazzola Special Issue Paper Pages: 235 - 241
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide S. -K. LeeC. -M. ZetterlingM. Östling Special Issue Paper Pages: 242 - 246
Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization E. DanielssonS. -K. LeeM. Östling Special Issue Paper Pages: 247 - 252
Effect of processing conditions on inversion layer mobility and interface state density in 4H−SiC MOSFETs S. BanerjeeK. ChattyR. J. Gutmann Special Issue Paper Pages: 253 - 259
A microindentation technique for determining strength of solder interface with silver metallization on Co-fired multilayer ceramic substrate Jian Ku ShangRong-Fong HuangDavid L. Wilcox Special Issue Paper Pages: 260 - 265
Thermally stable Nb and Nb/Au ohmic contacts to p-GaN Han-Ki KimTae-Yeon SeongCheul-Ro Lee Special Issue Paper Pages: 266 - 270
An optimum approach for fabrication of tapered hemispherical-end fiber for laser module packaging H. M. YangD. C. JouW. H. Cheng Special Issue Paper Pages: 271 - 274
Chemical and morphological studies of plasma-treated integrated circuit bond pads Y. F. ChongR. GopalakrishnanS. Tatti Special Issue Paper Pages: 275 - 282
A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN A. N. BrightD. M. TrickerR. Davies Letter Pages: L13 - L16
