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Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

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Abstract

Photoluminescence (PL) spectroscopy was used to monitor the efficiency of vanadium doping from a solid vanadium nitride source during CVD growth of 4H silicon carbide. More than an order of magnitude increase of vanadium related infrared photoluminescence in comparison to undoped samples was observed. By correcting the spectra for the contribution from the substrate, vanadium was shown to be incorporated in the epitaxial layer during CVD and was responsible for the observed differences in photoluminescence signal. Possible mechanisms of the vanadium transport to the growing layer and its incorporation are discussed.

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Authors and Affiliations

  1. Department of Electrical & Computer Engineering, Mississippi State University, Box 9571, MS 39762, Mississippi State, USA

    Y. Koshka, M. Mazzola & S. Yingquan

  2. Department of Chemistry, Mississippi State University, Box 9573, MS 39762, Mississippi State, USA

    C. U. Pittman

Authors
  1. Y. Koshka
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  2. M. Mazzola
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  3. S. Yingquan
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  4. C. U. Pittman
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Koshka, Y., Mazzola, M., Yingquan, S. et al. Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation. J. Electron. Mater. 30, 220–223 (2001). https://doi.org/10.1007/s11664-001-0019-x

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  • DOI: https://doi.org/10.1007/s11664-001-0019-x

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