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Chemical and morphological studies of plasma-treated integrated circuit bond pads

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Abstract

The effect of plasma treatment on the surface chemistry and morphology of Al-1%Si bond pads has been studied by a battery of analytical techniques. The ball shear strengths of the bond pads increased by ∼17% after CF4 plasma treatment. The improvement in wire bondability after plasma treatment is largely attributed to a decrease in the oxide thickness and a reduction in the height of the crystallites on the bond pad surface. However, micro-pits were formed after CF4 plasma treatment. The micro-pits become initiation sites of the first stage of a fluorine-induced corrosion where breakdown of the native passivating oxide occurs. In the second stage of corrosion, fresh Al beneath the oxide is exposed to the attack from the fluoride ions in the presence of water.

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Authors and Affiliations

  1. Division of Materials Engineering, School of Applied Science, Nanyang Technological University, Nanyang Avenue, 639798, Singapore

    Y. F. Chong & G. Sarkar

  2. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore

    R. Gopalakrishnan & C. F. Tsang

  3. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore

    S. Lim & S. Tatti

Authors
  1. Y. F. Chong
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  2. R. Gopalakrishnan
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  3. C. F. Tsang
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  4. G. Sarkar
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  5. S. Lim
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  6. S. Tatti
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Chong, Y.F., Gopalakrishnan, R., Tsang, C.F. et al. Chemical and morphological studies of plasma-treated integrated circuit bond pads. J. Electron. Mater. 30, 275–282 (2001). https://doi.org/10.1007/s11664-001-0029-8

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  • DOI: https://doi.org/10.1007/s11664-001-0029-8

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