Dishing and nitride erosion of STI-CMP for different integration schemes Lim Lim HweeS. BalakumarA. Senthilkumar Special Issue Paper Pages: 1478 - 1482
Nickel silicide as a contact material for submicron CMOS devices D. Z. ChiD. MangelinckS. K. Lahiri Special Issue Paper Pages: 1483 - 1488
Amorphous structures of buried oxide in SiC-on-insulator Manabu Ishimaru Special Issue Paper Pages: 1489 - 1492
Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics Huicai ZhongGreg HeussShin-Nam Hong Special Issue Paper Pages: 1493 - 1498
N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics Veena MisraManoj KulkarniHuicai Zhong Special Issue Paper Pages: 1499 - 1505
Effect of annealing on the surface microstructural evolution and the electromigration reliability of electroplated Cu films S. H. KangY. S. ObengA. S. Oates Special Issue Paper Pages: 1506 - 1512
Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnects L. W. ChuW. K. ChimL. Chan Special Issue Paper Pages: 1513 - 1519
Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process A. K. SikderFrank GiglioMark Anthony Special Issue Paper Pages: 1520 - 1526
Nano-indentation studies of xerogel and SiLK low-K dielectric materials A. K. SikderI. M. IrfanJ. M. Anthony Special Issue Paper Pages: 1527 - 1531
Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition S. BergerA. CaptainS. Levi Special Issue Paper Pages: 1532 - 1536
Plastic deformation and interfacial sliding in Al and Cu thin film: Si substrate systems due to thermal cycling I. DuttaM. W. ChenT. Shultz Special Issue Paper Pages: 1537 - 1548
Laser-induced titanium disilicide formation for submicron technologies Y. F. ChongK. L. PeyY. F. Lu Special Issue Paper Pages: 1549 - 1553
Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation P. S. LeeD. MangelinckA. See Special Issue Paper Pages: 1554 - 1559
Pattern density and deposition profile effects on oxide chemical-mechanical polishing and chip-level modeling Y. B. ParkI. Y. YoonW. G. Lee Special Issue Paper Pages: 1560 - 1568
Effects of deposition conditions of Al and Ti underlayer on electromigration reliability for deep-submicron interconnect metallization Y. B. ParkD. W. LeeW. Lee Special Issue Paper Pages: 1569 - 1577
A review: Thermal processing in fast ramp furnaces Pradip K. RoySailesh M. MerchantSanjeev Kaushal Special Issue Paper Pages: 1578 - 1583
Processing of Ta2O5 powders for electronic applications RAJ P. Singh Special Issue Paper Pages: 1584 - 1594
Effect of via etching process and postclean treatment on via electrical performance Chiew Nyuk HoYeow Kheng LimAlex See Special Issue Paper Pages: 1595 - 1601
“Seedless” electrochemical deposition of copper on physical vapor deposition-W2N liner materials for ultra large scale integration (ULSI) devices Michael J. ShawStephan GrunowDavid J. Duquette Special Issue Paper Pages: 1602 - 1608
Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices Jun-Ho ChoyYoung-Soo KimSang Beom Han Special Issue Paper Pages: 1609 - 1615
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties Bhushan SoporiYi ZhangN. M. Ravindra Special Issue Paper Pages: 1616 - 1627
Relaxed silicon-germanium on insulator substrate by layer transfer Zhiyuan ChengGianni TaraschiEugene A. Fitzgerald Letters Pages: L37 - L39
Electrochemical schottky characteristics of ZnO for capacitance-voltage measurements C. E. Stutz Letters Pages: L40 - L42
