A review: Thermal processing in fast ramp furnaces

Abstract

The capabilities and advantages of advanced batch furnaces in meeting semiconductor process requirements (up to a minimum of 100 nm technology node) are reviewed. Hot wall batch furnaces continue to provide accurate temperature control, low cost of ownership, and process advantages as compared to single-wafer tools. Recent advances by various furnace vendors have addressed the hot-walled furnace shortcomings of thermal response, process times, and automation overload, resulting in improved manufacturing economics. The inherent benefits such as large load size, isothermal processing, uniform film growth, high reliability, and low capital cost have ensured a substantial cost of ownership advantage over single-wafer processes. Accurate temperature modulation at high temperatures during both heating and cooling cycles has allowed synthesis of ultra thin gate oxides for devices below sub-200 nm design rule.