1. Foreword

   • Matthew L. Seaford

   EditorialNotes Pages: 893 - 893

2. The growth of GaN on lithium gallate (LiGaO₂) substrates for material integration

   • April S. Brown
   • W. Alan Doolittle
   • Z. Dai

   Special Issue Paper Pages: 894 - 896

3. Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

   • K. D. Hobart
   • F. J. Kub
   • C. K. Inoki

   Special Issue Paper Pages: 897 - 900

4. Relaxation enhancing interlayers (REIs) in threading dislocation reduction

   • A. E. Romanov
   • J. S. Speck

   Special Issue Paper Pages: 901 - 905

5. Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

   • M. L. Seaford
   • D. H. Tomich
   • W. I. Wang

   Special Issue Paper Pages: 906 - 908

6. Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz

   • Stefan Bengtsson
   • Petra Amirfeiz

   Special Issue Paper Pages: 909 - 915

7. Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

   • Y. Zheng
   • P. D. Moran
   • M. Nastasi

   Special Issue Paper Pages: 916 - 920

8. SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

   • P. M. Mooney
   • J. O. Chu
   • J. A. Ott

   Special Issue Paper Pages: 921 - 927

9. Transfer of semiconductor and oxide films by wafer bonding and layer cutting

   • Qin-Yi Tong
   • Li-Juan Huang
   • Ulich M. Gösele

   Special Issue Paper Pages: 928 - 933

10. Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates

    • K. Vanhollebeke
    • I. Moerman
    • P. Demeester

    Special Issue Paper Pages: 933 - 939

11. Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

    • D. H. Tomich
    • K. G. Eyink
    • C. H. Lin

    Special Issue Paper Pages: 940 - 943

12. Strain relaxation in InGaAs lattice engineered substrates

    • P. Chavarkar
    • S. K. Mathis
    • U. K. Mishra

    Special Issue Paper Pages: 944 - 949

13. Low-dislocation relaxed SiGe grown on an effective compliant substrate

    • Y. H. Luo
    • J. L. Liu
    • K. N. Tu

    Special Issue Paper Pages: 950 - 955

14. Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III–V compound semiconductors from melts

    • P. S. Dutta
    • T. R. Miller

    Special Issue Paper Pages: 956 - 963

15. Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties

    • P. Ressel
    • P. H. Hao
    • H. L. Hartnagel

    Special Issue Paper Pages: 964 - 972

16. Er-doped polycrystalline silicon for light emission at λ=1.54 µm

    • Thomas D. Chen
    • Anuradha M. Agarwal
    • Lionel C. Kimerling

    Special Issue Paper Pages: 973 - 978

17. Complex permeability studies of Li¹⁺ substituted Cu-Zn ferrites

    • S. S. Suryavanshi
    • S. M. Kabbur
    • S. R. Sawant

    Special Issue Paper Pages: 979 - 983

18. Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part I: The influence of window layer oxidation

    • Ignacio Rey-Stolle
    • Carlos Algora

    Special Issue Paper Pages: 984 - 991

19. Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part II: The influence of uncertainties in the parameters of window and antireflection coatings

    • Ignacio Rey-Stolle
    • Carlos Algora

    Special Issue Paper Pages: 992 - 999

20. Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport

    • Seoyong Ha
    • Noel T. Nuhfer
    • Marek Skowronski

    Letter Pages: L5 - L8