Abstract
Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate—lithium gallate—for the ultimate regrowth on a bonded GaN template. The bonding technology is important to reduce thermal stresses during the regrowth step. Herein, we focus on the understanding of the growth of GaN on lithium gallate.
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References
Y.H. Lo, Appl. Phys. Lett. 59, 2311 (1991).
A.S. Brown, J. Vac. Sci. Technol. B 16, 2308 (1998).
W.I. Wang, J. Vac. Sci. Technol. B 16, 1489 (1998).
Z. Yang, F. Guarin, I.W. Tao, W.I. Wang, and S.S. Iyer, J. Vac. Sci. Technol. B 13, 789 (1995).
C. Carter-Coman, A.S. Brown, N.M. Jokerst, D.E. Dawson, R. Bicknell-Tassius, Z.C. Feng, K.C. Rajkumar, and G. Dagnall, J. Electron. Mater. 25, 1044 (1996).
C. Carter-Coman, R. Bicknell-Tassius, A.S. Brown, and N.M. Jokerst, Appl. Phys. Lett. 70, 1754 (1997).
F.E. Ejeckham, M.L. Seaford, Y.H. Lo, H.Q. Hou, and B.E. Hammons, Appl. Phys. Lett. 71, 776 (1997).
W.S. Wonga, T. Sands, and N.W. Cheung, Appl. Phys. Lett. 72, 599 (1998).
W.A. Doolittle, S. Kang, T.J. Kropewnicki, S. Stock, P.A. Kohl, and A.S. Brown, J. Electron. Mater. 27, L58 (1998).
W.A. Doolittle, T. Kropenwicki, C. Carter-Coman, S. Stock, P. Kohl, N.M. Jokerst, R.A. Metzger, S. Kang, K. Lee, G. May, and A.S. Brown, J. Vac. Sci. & Tech. B 16, 1300 (1998).
T.J. Kropewnicki, W.A. Doolittle, C. Carter-Coman, S. Kang, P.A. Kohl, N.M. Jokerst, and A.S. Brown, J. Electrochem. Soc. Lett. 145, L88 (1998).
W.A. Doolittle, T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N.M. Jokerst, R.A. Metzger, S. Kang, K. Lee, G. May, and A.S. Brown, Proc. Mater. Res. Soc. (Pittsburgh, PA: MRS, 1997).
R.J. Matyi, W.A. Doolittle, and A.S. Brown, J. Phys. D: Appl. Phys. 32, A61 (1999).
S. Kang, W.A. Doolittle, and A.S. Brown, Appl. Phys. Lett. 74, 3380 (1999).
T.S. Kuan (private communication).
H. Neumann, E. Pirl, and G. Kuhn, J. Mater. Sci. Lett. (GB), 6, 495 (1987).
J.H. Edgar, ed., Properties of Group III Nitrides (London: INSPEC, 1994).
S. Nanamatsu, K. Doi, and M. Takahashi, Jpn. J. Appl. Phys. 11, 816 (1972).
T. Ishii, Y. Tazoh, and S. Miyazawa, J. Cryst. Growth 189–190, 208 (1998).
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Brown, A.S., Doolittle, W.A., Kang, S. et al. The growth of GaN on lithium gallate (LiGaO2) substrates for material integration. J. Electron. Mater. 29, 894–896 (2000). https://doi.org/10.1007/s11664-000-0176-3
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DOI: https://doi.org/10.1007/s11664-000-0176-3