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Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties

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Abstract

The development of two metallizations based on the solid-phase regrowth principle is presented, namely Pd/Sb(Zn) and Pd/Ge(Zn) on moderately doped In0.53Ga0.47As (p=4×1018 cm−3). Contact resistivities of 2–3×10−7 and 6–7×10−7 Ωcm2, respectively, have been achieved, where both systems exhibit an effective contact reaction depth of zero and a Zn diffusion depth below 50 nm. Exhibiting resistivities equivalent to the lowest values of Au-based systems in this doping range, especially Pd/Sb(Zn) contacts are superior to them concerning metallurgical stability and contact penetration. Both metallizations have been successfully applied for contacting the base layer of InP/In0.53Ga0.47As heterojunction bipolar transistors.

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Author information

Author notes

  1. P. H. Hao

    Present address: Texas Instruments, 75265, Dallas, TX, USA

  2. M. H. Park

    Present address: ETRI, Yusong P.O. Box 106, Taejon, Korea

  3. Z. C. Yang

    Present address: Dallas Semiconductor, 77242, Dallas, TX, USA

Authors and Affiliations

  1. Ferdinand-Braun-Institut für Höchstfrequenztechnik, A.-Einstein-Str. 11, D-12489, Berlin, Germany

    P. Ressel

  2. Texas A&M University, 77843-3128, College Station, TX, USA

    P. H. Hao, M. H. Park, Z. C. Yang & L. C. Wang

  3. Bundesanstalt für Materialforschung und -prüfung, Unter den Eichen 87, D-12200, Berlin, Germany

    W. Österle

  4. Ferdinand-Braun-Institut für Höchstfrequenztechnik, A.-Einstein-Str. 11, D-12489, Berlin, Germany

    P. Kurpas & E. Richter

  5. Deutsche Telekom AG, TZ, D-64295, Darmstadt, Germany

    E. Kuphal

  6. Technische Universität Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany

    H. L. Hartnagel

Authors
  1. P. Ressel
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Ressel, P., Hao, P.H., Park, M.H. et al. Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties. J. Electron. Mater. 29, 964–972 (2000). https://doi.org/10.1007/s11664-000-0189-y

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  • DOI: https://doi.org/10.1007/s11664-000-0189-y

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