GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report M. V. MaximovN. N. LedentsovD. Bimberg Special Issue Paper Pages: 476 - 486
InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices M. V. MaximovI. L. KrestnikovC. M. Sotomayor Torres Special Issue Paper Pages: 487 - 493
Electromagnetic response of 3D arrays of quantum dots S. A. MaksimenkoG. Y. SlepyanZh. I. Alferov Special Issue Paper Pages: 494 - 503
Modified fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth C. WaltherR. P. BlumW. T. Masselink Special Issue Paper Pages: 504 - 509
Size dependence of the magnetic properties of electrochemically self-assembled Fe quantum dots L. MenonM. ZhengD. J. Sellmyer Special Issue Paper Pages: 510 - 515
Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers Takehiko TawaraSatoru TanakaIkuo Suemune Special Issue Paper Pages: 515 - 519
Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs Hong-Wen RenSelvakumar V. NairYasuaki Matsumoto Special Issue Paper Pages: 520 - 524
STM probe-assisted site-control of self-organized InAs quantum dots on GaAs surfaces Shigeru KohmotoHitoshi NakamuraKiyoshi Asakawa Special Issue Paper Pages: 525 - 529
Structural and optical characterization of self-formed GaP/InP quantum dots S. GondaH. AsahiS. Tagawa Special Issue Paper Pages: 530 - 535
Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots Sukho YoonYoungboo MoonJeong Yong Lee Special Issue Paper Pages: 535 - 541
Formation and characterization of self-organized CdSe quantum dots Kenzo MaehashiNobuhiro YasuiHisao Nakashima Special Issue Paper Pages: 542 - 549
Issues of practical realization of a quantum dot register for quantum computing Alexander BalandinGaolong JinKang L. Wang Special Issue Paper Pages: 549 - 553
Study of phonons in self-organized multiple Ge quantum dots J. L. LiuG. JinD. P. Yu Special Issue Paper Pages: 554 - 556
Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications D. B. JanesTakhee LeeR. Reifenberger Special Issue Paper Pages: 565 - 569
Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates T. I. KaminsD. P. Basile Special Issue Paper Pages: 570 - 576
Inelastic light scattering from electronic excitations in quantum dots C. M. Sotomayor TorresD. J. LockwoodP. D. Wang Special Issue Paper Pages: 576 - 585
Selective dry etching of InGaP over GaAs in inductively coupled plasmas P. LeerungnawaratH. ChoS. J. Pearton Special Issue Paper Pages: 586 - 590
Depth defined optoelectronic modulation spectroscopy Chi-Hsin ChiuJ.G Swanson Special Issue Paper Pages: 591 - 597
In situ device processing using shadow mask selective area epitaxy and in situ metallization Y. LuoL. ZengS. A. Schwarz Special Issue Paper Pages: 598 - 602
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN B. BoudartS. TrassaertF. Omnes Special Issue Paper Pages: 603 - 606
Laser pattern-write crystallization of amorphous SiC alloys C. PalmaC. Sapia Special Issue Paper Pages: 607 - 610
Effect of material processing on fatigue of FPC rolled copper foil Takaaki HatanoYoshio KurosawaJunji Miyake Special Issue Paper Pages: 611 - 616
Characterization of the microstructure of Co thin film on silicon substrate by TEM Z. L. ZhangZ. G. XiaoZ. S. Yu Special Issue Paper Pages: 617 - 621
Influence of microstructure on fatigue crack growth behavior of Sn-Ag solder interfaces Pi Lin LiuJian Ku Shang Special Issue Paper Pages: 622 - 627
