Abstract
It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate. Optically induced charge variations as small as 2 × 109 electrons/cm2/eV have been detected. A refinement of the basic method is described which should allow the responses of electron states in a region of selected depth within the active layer states to be seen. The method will be of particular value in observing states that have a role in back-gating.
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Chiu, CH., Swanson, J. Depth defined optoelectronic modulation spectroscopy. J. Electron. Mater. 29, 591–597 (2000). https://doi.org/10.1007/s11664-000-0050-3
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DOI: https://doi.org/10.1007/s11664-000-0050-3