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GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

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Abstract

We review the present status of InGaAs quantum dot lasers on GaAs sub-strates emitting near and at 1.3 µm. Such lasers are shown to be extremely promising for cost-efficient commercial applications in optical fiber communication. Threshold current densities a low as ∼20 Acm−2 per QD sheet are achieved. Room temperature continuous wave operation at 2.7 W for broad stripe devices is demonstrated. The maximum differential efficiency amounts to 57%. Moreover, single lateral mode continuous wave operation with a maximum output power of 110 mW is realized. Prospects for 1.3 µm GaAs-based vertical cavity surface emitting lasers are given. We also show that the longest wavelength of QD GaAs-based light emitting devices can be potentially extended to 1.7 µm.

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Author notes

  1. M. V. Maximov & N. N. Ledentsov

    Present address: A.F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

Authors and Affiliations

  1. A.F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

    V. M. Ustinov & Zh. I. Alferov

  2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, Germany

    N. N. Ledentsov & D. Bimberg

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  1. M. V. Maximov
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Maximov, M.V., Ledentsov, N.N., Ustinov, V.M. et al. GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report. J. Electron. Mater. 29, 476–486 (2000). https://doi.org/10.1007/s11664-000-0032-5

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