The excition tunneling in ZnCdSe/ZnSe asymmetric double quantum well Guangyou YuXiwu FanXiaowei Zhao Regular Issue Paper Pages: 1007 - 1009
Scanning force microscopy studies of GaAs films grown on offcut Ge substrates Q. XuJ. W. P. HsuS. A. Ringel Regular Issue Paper Pages: 1010 - 1016
Performance characterization of InGaP Schottky contact with ITO transparent electrodes Ching-Ting LeeChing-Hung FuWei Lin Regular Issue Paper Pages: 1017 - 1021
Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors D. KnollB. HeinemannD. Wolansky Regular Issue Paper Pages: 1022 - 1026
Ultra-shallow P+/N junctions formed by recoil implantation Henley L. LiuSteven S. GearhartWei Wang Regular Issue Paper Pages: 1027 - 1029
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique P. J. WellmannW. V. SchoenfeldP. M. Petroff Regular Issue Paper Pages: 1030 - 1033
Effect of dissolved oxygen on thermal oxidation in Ta2O5/Ta sandwiches Yu. Pozdeev-FreemanA. GladkikhA. Palevski Regular Issue Paper Pages: 1034 - 1037
Infrared materials for thermophotovoltaic applications G. W. CharacheJ. L. EgleyK. Zhang Regular Issue Paper Pages: 1038 - 1042
Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy Takahiro KitadaTatsuya SaekiSatoshi Hiyamizu Regular Issue Paper Pages: 1043 - 1046
Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy S. RujirawatDavid J. SmithS. Sivananthan Regular Issue Paper Pages: 1047 - 1052
Green light emissions from GaP-AlxGa1−xP double heterostructures Yu TongjunT. MatuoJ. Nishizawa Regular Issue Paper Pages: 1053 - 1058
Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut Xiang LuS. Sundar Kumar IyerNathan W. Cheung Regular Issue Paper Pages: 1059 - 1066
In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers G. LiS. YuanC. Jagadish Letters Pages: L61 - L63