Abstract
Green light emissions from GaP-AlxGa1−xP single and double heterostructures fabricated by temperature difference method under controlled vapor pressure liquid phase epitaxy, have been studied. When the luminescent layer GaP is very thin, we have observed efficient free exciton emissions from GaP-AlxGa1−xP double heterostructures while there is no detection from homostructures. At least ten times and two times stronger luminescence efficiencies were obtained from double heterostructures at 77K and room temperature, respectively. The higher free exciton recombination efficiency is thought to profit from free carrier confinement by potential barrier at the interface of GaP and AlxGa1−xP. Also, it is found that shallow impurities enhance the photoluminescence intensities in GaP-AlxGa1−xP double heterostructures.
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Tongjun, Y., Matuo, T., Suto, K. et al. Green light emissions from GaP-AlxGa1−xP double heterostructures. J. Electron. Mater. 27, 1053–1058 (1998). https://doi.org/10.1007/s11664-998-0163-7
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DOI: https://doi.org/10.1007/s11664-998-0163-7