Abstract
We report the tunability of up to 150 meV of the ground state transition of self-assembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T=12K) of the quantum dot transition remains at 80% of its original value after implantation with a Mn dose of 1×1013 cm−2ions. Strong luminescence still remains at room temperature. At a high implantation dose (1×1015 cm−2) and rapid thermal annealing (700°C for 60s) about 25% of the QD luminescence intensity is recovered at T=12K.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. DenBaars and P.M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
P.M. Petroff and P. DenBaars, Superlattices Microstr. 15 (1994).
M. Grundmann, N.N. Ledentsov, R. Heitz, L. Eckey, J. Christen, J. Bohrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, J. Heidenreich, V.M. Ustinov, A.Yu. Egerov, A.E. Zhukov, P.S. Kop’ev and Zh.I. Alverov, Phys. Rev. Lett. 74, 4043 (1995).
G. Yusa and H. Sakaki, Appl. Phys. Lett. 70, 345 (1997).
S. Sauvage, P. Boucaud, F.H. Julien, J.M. Gerard and V. Thierry-Mieg, Appl. Phys. Lett. (19), 2785 (1997).
R. Leon, S. Fafard, D. Leonard, J.L. Merz and P.M. Petroff, Appl. Phys. Lett. 67, 521 (1995).
N.N. Ledentsov, V.A. Shchukin, M. Grundmann, N. Kirstaedter and D. Bimberg, Phys. Rev. B 54, 8743 (1996).
O. Brandt, L. Tapfer, K. Ploog, R. Bierwolf and M. Hohenstein, Appl. Phys. Lett. 61, 2814 (1992).
J.M. Garcia, G. Medeiros-Ribeiro, K. Schmidt, T. Ngo, J.L. Feng, A. Lorke, J. Kotthaus and P.M. Petroff, Appl. Phys. Lett. 71 (14), 2014 (1994).
J.M. Garcia, T. Mankad, P.O. Holtz, P.J. Wellmann and P.M. Petroff, to be published in Appl. Phys. Lett.
R. Leon, Yong Kim, M. Gal, J. Zou and D.J.H. Cockayne, Appl. Phys. Lett. 69 (13), 1888 (1996).
S. Malik, C. Roberts, R. Murray and M. Pate, Appl. Phys. Lett. 71 (14), 1987 (1997).
W.V. Schoenfeld, C.H. Chen, P.M. Petroff and E.L. Hu, submitted to Appl. Phys. Lett.
F. Laruelle, P. Hu, R. Simes, R. Kubena, W. Robinson, J. Merz and P.M. Petroff, J. Vac. Sci. Technol. B 7, 2035 (1989).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wellmann, P.J., Schoenfeld, W.V., Garcia, J.M. et al. Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique. J. Electron. Mater. 27, 1030–1033 (1998). https://doi.org/10.1007/s11664-998-0158-4
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-998-0158-4