1. Electrical properties at p-ZnSe/metal interfaces

   • T. Kawakami
   • Y. Koide
   • Masanori Murakami

   Regular Issue Paper Pages: 929 - 935

2. Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

   • Yuusuke Tanaka
   • Akira Tanabe
   • Masaki Hirose

   Regular Issue Paper Pages: 936 - 940

3. Phase coarsening and crack growth rate during thermo-mechanical cycling of 63Sn37Pb solder joints

   • P. L. Hacke
   • Y. Fahmy
   • H. Conrad

   Regular Issue Paper Pages: 941 - 947

4. Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors

   • K. Yasuda
   • K. Mori
   • T. Nimura

   Regular Issue Paper Pages: 948 - 953

5. Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability

   • R. F. Kopf
   • R. A. Hamm
   • F. Ren

   Regular Issue Paper Pages: 954 - 960

6. Phase equilibria, defect chemistry and semiconducting properties of CdTe(s)—Thermodynamic modeling

   • Q. Chen
   • M. Hillert
   • R. Schmid-Fetzer

   Regular Issue Paper Pages: 961 - 971

7. Plasma chemistries for dry etching of NiFe and NiFeCo

   • K. B. Jung
   • J. Hong
   • A. T. Hurst Jr.

   Regular Issue Paper Pages: 972 - 978

8. Stoichiometry-dependent deep levels in undoped p-type Al_0.38Ga_0.62As grown by liquid phase epitaxy

   • Hiroshi Watanabe
   • Mitsutake Motozawa
   • Jun-Ichi Nishizawa

   Regular Issue Paper Pages: 979 - 984

9. The application of flip-chip bonding interconnection technique on the module assembly of 10 Gbps laser diode

   • Haksoo Han
   • Hyunsoo Chung
   • Minkyu Song

   Regular Issue Paper Pages: 985 - 989

10. Influence of surface contamination on metal/metal bond contact quality

    • A. Schneuwly
    • P. Gröning
    • V. P. Jaecklin

    Regular Issue Paper Pages: 990 - 997

11. Effects of intermediate semiconductor layers on carrier transport mechanisms through p-ZnSe/metals interfaces

    • T. Kagawa
    • Yasuo Koide
    • Masanori Murakami

    Regular Issue Paper Pages: 998 - 1002

12. A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers

    • V. A. Mishurnyi
    • F. De Anda
    • J. Nieto-Navarro

    Regular Issue Paper Pages: 1003 - 1004

13. An optically addressed ZnO ultraviolet light modulator with 10:1 contrast

    • M. Wraback
    • H. Shen
    • Y. Lu

    Abstract Pages: 1005 - 1005

14. Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface fermi level shifts

    • C. R. Bolognesi
    • M. W. Dvorak
    • D. H. Chow

    Letter Pages: L54 - L57

15. MBE growth of high quality GaN on LiGaO₂

    • W. A. Doolittle
    • S. Kang
    • A. S. Brown

    Letters Pages: L58 - L60