Abstract
We report on the growth of high structural quality (as determined by x-ray diffraction) GaN on a near lattice matched substrate, lithium gallate (LiGaO2 or LGO). Low temperature growth conditions are described that result in very thin GaN films (<0.3 µm) with (0004) x-ray diffraction rocking curves full width at half maximum (FWHM) of 145 arc-sec and thicker films (1 µm) resulting in 85 arc-sec FWHM. The effect of growth temperature is examined and found to result in a broad minimum in x-ray FWHM around 690°C. Detailed growth conditions and descriptions of the reflection high energy electron diffraction patterns observed during growth are given. Additionally, we report very highly resistive material and doped material with bulk electron mobilities in excess of 100 cm2/V-sec.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
O. Nam, M.D. Bremser, T.S. Zheleva and R.F. Davis, Appl. Phys. Lett. 71 (18), 2638, Nov. 3 (1997).
M.A.L. Johnson, W.C. Hughes, W.H. Rowland, Jr., J.W. Cook, Jr., J.F. Schetzina, M. Leonard, H.S. Kong, J.A. Edmund and J. Zavada, J. Cryst. Growth 175/176, 72 (1997).
M.A.L. Johnson, Shizuo Fujita, W.H. Rowland, Jr., K.A. Bowers, W.C. Hughes, Y.W. He, N.A. El Masry, J.W. Cook, Jr., J.F. Schetzina, J. Ren and J.A. Edmund, Sol. St. Elect. 41 (2) 213 (1997).
Yasuo Tazoh, Takao Ishii and Shintaro Miyazawa, Jpn. J. Appl. Phys. 36, Part 2, (6B), 15 June, L746 (1997).
W.A. Doolittle, T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N.M. Jokerst, R.A. Metzger, S. Kang, K. Lee, G. May and A.S. Brown, to be published in J. Vac. Sci. Tech. B, May/June 1998.
W.A. Doolittle, T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N.M. Jokerst, R.A. Metzger, S. Kang, K. Lee, G. May and A.S. Brown, Proc. of Material Research Soc. Symp. D, Boston MA, 1997 (Pittsburgh, PA: Mater. Res. Soc.).
S. Keller, B.P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J.S. Speck, U.K. Mishra and S.P. DenBaars, Appl. Phys. Lett. 68 (1), March 11, 1525 (1996).
T. Matsuoka, N. Yoshimoto, T. Sasaki and A. Katsui, J. Electron. Mater. 21, 157 (1992).
M.A.L. Johnson, N.A. El Masry, J.W. Cook, Jr. and J.F. Schetzina, Intl. Conf. on Silicon Carbide, III-nitrides and Related Materials-1997, Stockholm, Swedan, Sept. 1997.
T.J. Kropewnicki, W.A. Doolittle, C. Carter-Coman, S. Kang. P.A. Kohl, N.M. Jokerst and A.S. Brown, to be published in J. Electrochem. Soc. Lett. May 1998.
P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado and M. Razeghi, Appl. Phys. Lett. 69 (14), 30 Sept. (1996).
S. Strite and H. Morkoç, J. Vac. Sci. Tech. B 10 (4), 1237 (1992).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Doolittle, W.A., Kang, S., Kropewnicki, T.J. et al. MBE growth of high quality GaN on LiGaO2 . J. Electron. Mater. 27, L58–L60 (1998). https://doi.org/10.1007/s11664-998-0137-9
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-998-0137-9