1. Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs

   • L. H. Kuo
   • K. Kimura
   • T. Yao

   OriginalPaper Pages: 53 - 63

2. Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE

   • A. Y. Lew
   • C. H. Yan
   • E. T. Yu

   OriginalPaper Pages: 64 - 69

3. An empirical relation between the melting point and the direct bandgap of semiconducting compounds

   • B. R. Nag

   OriginalPaper Pages: 70 - 72

4. Magnetic and photomagnetic properties of polycrystalline wide-gap semiconductor Cd_1-xMn_xTe thin films

   • X. -F. He
   • A. Kotlicki
   • P. Lozano-Tovar

   OriginalPaper Pages: 73 - 77

5. Study of metal-polymer adhesion—A new technology: Cu plasma PIB

   • G. -R. Yang
   • H. Shen
   • T. -M. Lu

   OriginalPaper Pages: 78 - 82

6. Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode

   • Dae-Woo Kim
   • Joon Seop Kwak
   • Sam-Kyu Noh

   OriginalPaper Pages: 83 - 89

7. The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact

   • G. L. Waytena
   • H. A. Hoff
   • J. S. Suehle

   OriginalPaper Pages: 90 - 96

8. Substitutional-interstitial silver diffusion and drift in bulk (cadmium,mercury) telluride: Results and mechanistic implications

   • Igor Lyubomirsky
   • Vera Lyakhovitskaya
   • David Cahen

   OriginalPaper Pages: 97 - 105

9. Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

   • Byung Lyul Park
   • Dae-Hong Ko
   • Moon Yong Lee

   OriginalPaper Pages: L1 - L5

10. Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga_0.47In_0.53As/InP single quantum well

    • C. Guillot
    • M. Dugay
    • Y. Monteil

    OriginalPaper Pages: L6 - L8